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| 型號： | AM28F010-200JI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁數(shù)： | 8/35頁 |
| 文件大?。?/td> | 492K |
| 代理商： | AM28F010-200JI |
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8
Am28F010
V
CC
< V
LKO
(see DC Characteristics section for
voltages). When V
CC
< V
LKO
, the command register is
disabled, all internal program/erase circuits are
disabled, and the device resets to the read mode. The
device ignores all writes until V
CC
> V
LKO
. The user
must ensure that the control pins are in the correct logic
state when V
CC
> V
LKO
to prevent uninitentional writes.
Write Pulse “Glitch” Protection
Noise pulses of less than 10 ns (typical) on OE#, CE#
or WE# will not initiate a write cycle.
Logical Inhibit
Writing is inhibited by holding any one of OE# = V
IL
, CE#
= V
IH
or WE# = V
IH
. To initiate a write cycle CE# and
WE# must be a logical zero while OE# is a logical one.
Power-Up Write Inhibit
Power-up of the device with WE# = CE# = V
IL
and
OE# = V
IH
will not accept commands on the rising
edge of WE#. The internal state machine is automat-
ically reset to the read mode on power-up.
FUNCTIONAL DESCRIPTION
Description of User Modes
Table 1.
Am28F010 Device Bus Operations
Legend:
X = Don’t care, where Don’t Care is either V
IL
or V
IH
levels. V
PPL
= V
PP
≤
V
CC
+ 2 V See DC Characteristics for voltage levels
of V
PPH
. 0 V < An < V
CC
+ 2 V (normal TTL or CMOS input levels, where n = 0 or 9).
Notes:
1. V
PPL
may be grounded, connected with a resistor to ground, or < V
CC
+ 2.0 V V
PPH
is the programming voltage specified for
the device. Refer to the DC characteristics. When V
PP
= V
PPL
, memory contents can be read but not written or erased.
2. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 2.
3. 11.5 < V
ID
< 13.0 V Minimum V
ID
rise time and fall time (between 0 and V
ID
voltages) is 500 ns.
4. Read operation with V
PP
= V
PPH
may access array data or the Auto select codes.
5. With V
PP
at high voltage, the standby current is I
CC
+ I
PP
(standby).
6. Refer to Table 3 for valid D
IN
during a write operation.
7. All inputs are Don’t Care unless otherwise stated, where Don’t Care is either V
IL
or V
IH
levels. In the Auto select mode all
addresses except A9 and A0 must be held at V
IL
.
8. If V
CC
≤
1.0 Volt, the voltage difference between V
PP
and V
CC
should not exceed 10.0 volts. Also, the Am28F010 has a V
PP
rise time and fall time specification of 500 ns minimum.
Operation
CE
#
(E
#
)
OE
#
(G
#
) WE
#
(W
#
)
V
PP
(Note 1)
A0
A9
I/O
Read-Only
Read
V
IL
V
IL
X
V
PPL
A0
A9
D
OUT
Standby
V
IH
X
X
V
PPL
X
X
HIGH Z
Output Disable
V
IL
V
IH
V
IH
V
PPL
X
X
HIGH Z
Auto-Select Manufacturer
Code (Note 2)
V
IL
V
IL
V
IH
V
PPL
V
IL
V
ID
(Note 3)
CODE
(01h)
Auto-Select Device Code
(Note 2)
V
IL
V
IL
V
IH
V
PPL
V
IH
V
ID
(Note 3)
CODE
(A7h)
Read/Write
Read
V
IL
V
IL
V
IH
V
PPH
A0
A9
D
OUT
(Note 4)
Standby (Note 5)
V
IH
X
X
V
PPH
X
X
HIGH Z
Output Disable
V
IL
V
IH
V
IH
V
PPH
X
X
HIGH Z
Write
V
IL
V
IH
V
IL
V
PPH
A0
A9
D
IN
(Note 6)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F010-200JIB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200PC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200PCB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200PE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200PEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F010-200JIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200PC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200PCB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200PE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200PEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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