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參數(shù)資料
| 型號： | AM28F010 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 1兆位（128畝× 8位）的CMOS 12.0伏，整體擦除閃存 |
| 文件頁數(shù)： | 35/35頁 |
| 文件大?。?/td> | 492K |
| 代理商： | AM28F010 |
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Am28F010
35
REVISION SUMMARY FOR AM28F010
Revision G+1
Distinctive Characteristics:
High Performance: The fastest speed option available
is now 70 ns.
General Description:
Paragraph 2: Changed fastest speed option to 70 ns.
Product Selector Guide:
Added -70, deleted -95 and -250 speed options.
Ordering Information, Standard Products:
The -70 speed option is now listed in the example.
Valid Combinations: Added -70, deleted -95 and -250
combinations.
Operating Ranges:
V
CC
Supply Voltages:Added -70, deleted -95 and -250
speed options.
AC Characteristics:
Read Only Operations Characteristics: Added the -70
column and test conditions.
Deleted -95 and -250 speed options.
AC Characteristics:
Write/Erase/Program Operations: Added the -70 col-
umn. Deleted -95 and -250 speed options. Changed
speed option in Note 2 to -70.
Switching Test Waveforms:
In the 3.0 V waveform caption, changed -95 to -70.
Revision H
Matched formatting to other current data sheets.
Revision H+1
Figure 3, Flashrite Programming Algorithm: Moved end
of arrow originating from Increment Address box so
that it points to the PLSCNT = 0 box, not the Write Pro-
gram Verify Command box. This is a correction to the
diagram on page 6-189 of the 1998 Flash Memory
Data Book.
Revision H+2
Programming In A PROM Programmer:
Deleted the paragraph “(Refer to the AUTO SELECT
paragraph in the ERASE, PROGRAM, and READ
MODE section for programming the Flash memory de-
vice in-system).”
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F010-120EC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120ECB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120EE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120EEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120EI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F010-120/BUA | 制造商:Advanced Micro Devices 功能描述:EEPROM-EEPROM: PARALLEL |
| AM28F010-120C3/BUA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AM28F010-120C3/BXA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AM28F010-120C3DC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AM28F010-120C3DCB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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