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參數(shù)資料
| 型號： | AM28F010A-150JIB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 1兆位（128畝× 8位）的CMOS 12.0伏，整體擦除閃存的嵌入式記憶算法 |
| 文件頁數(shù)： | 14/35頁 |
| 文件大?。?/td> | 464K |
| 代理商： | AM28F010A-150JIB |
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14
Am28F010A
Write Operation Status
Data Polling—DQ7
The device features Data# Polling as a method to indi-
cate to the host system that the Embedded algorithms
are either in progress or completed.
While the Embedded Programming algorithm is in oper-
ation, an attempt to read the device at a valid address
will produce the complement of expected Valid data on
DQ7. Upon completion of the Embedded Program algo-
rithm an attempt to read the device at a valid address will
produce Valid data on DQ7. The Data# Polling feature is
valid after the rising edge of the second WE# pulse of
the two write pulse sequence.
While the Embedded Erase algorithm is in operation,
DQ7 will read “0"
until the erase operation is com-
pleted. Upon completion of the erase operation, the
data on DQ7 will read “1.” The Data# Polling feature is
valid after the rising edge of the second WE# pulse of
the two Write pulse sequence.
The Data# Polling feature is only active during Embed-
ded Programming or erase algorithms.
See Figures 3 and 4 for the Data# Polling timing spec-
ifications and diagrams. Data# Polling is the standard
method to check the write operation status, however,
an alternative method is available using Toggle Bit.
START
Fail
No
DQ7 = Data
DQ7 = Data
DQ5 = 1
No
Pass
Yes
No
Yes
Read Byte
(DQ0–DQ7)
Addr = VA
Read Byte
(DQ0–DQ7)
Addr = VA
Yes
VA = Byte address for programming
= XXXXh during chip erase
16778D-8
Note:
DQ7 is rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5 or after DQ5.
Figure 3.
Data
#
Polling Algorithm
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PDF描述 |
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| AM28F010A-150PC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150PCB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150PE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150PEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150PI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F010A-150LE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AM28F010A-150LEB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AM28F010A-150PC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150PCB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150PE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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