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參數(shù)資料
| 型號(hào)： | AM28F010A-200EC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 128K X 8 FLASH 12V PROM, 200 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁(yè)數(shù)： | 25/35頁(yè) |
| 文件大?。?/td> | 464K |
| 代理商： | AM28F010A-200EC |
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Am28F010A
25
AC Characteristics—Write (Erase/Program) Operations
Notes:
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read Only operations.
2.
Embedded Program Operation of 14 μs consists of 10 μs program pulse and 4 μs write recovery before read. This is the
minimum time for one pass through the programming algorithm.
3. Embedded Erase operation of 5 sec consists of 4 sec array pre-programming time and one sec array erase time. This is a
typical time for one embedded erase operation.
4. Not 100% tested.
Parameter Symbols
Am28F010A Speed Options
JEDEC
Standard
Description
-70
-90
-120
-150
-200
Unit
t
AVAV
t
WC
Write Cycle Time (Note 4)
Min
70
90
120
150
200
ns
t
AVWL
t
AS
Address Setup Time
Min
0
0
0
0
0
ns
t
WLAX
t
AH
Address Hold Time
Min
45
45
50
60
75
ns
t
DVWH
t
DS
Data Setup Time
Min
45
45
50
50
50
ns
t
WHDX
t
DH
Data Hold Time
Min
10
10
10
10
10
ns
t
OEH
Output Enable Hold Time for Embedded
Algorithm only
Min
10
10
10
10
10
ns
t
GHWL
Read Recovery TIme Before Write
Min
0
0
0
0
0
ns
t
ELWLE
t
CSE
CE
#
Embedded Algorithm Setup TIme
Min
20
20
20
20
20
ns
t
WHEH
t
CH
CE
#
Hold TIme
Min
0
0
0
0
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
45
45
50
60
60
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
20
20
20
20
20
ns
t
WHWH3
Embedded Program Operation (Note 2)
Min
14
14
14
14
14
μs
t
WHWH4
Embedded Erase Operation (Note 3)
Typ
5
5
5
5
5
sec
t
VPEL
V
PP
Setup Time to Chip Enable Low (Note 4)
Min
100
100
100
100
100
ns
t
VCS
V
CC
Setup TIme (Note 4)
Min
50
50
50
50
50
μs
t
VPPR
V
PP
Rise Time (Note 4) 90% V
PPH
Min
500
500
500
500
500
ns
t
VPPF
V
PP
Fall Time (Note 4) 90% V
PPL
Min
500
500
500
500
500
ns
t
LKO
V
CC
< V
LKO
to Reset (Note 4)
Min
100
100
100
100
100
ns
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| AM28F010A-200ECB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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| AM28F010A-70EEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F010A-200ECB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-200EE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-200EEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-200EI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-200EIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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