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參數(shù)資料
| 型號： | AM28F010A-70EI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 128K X 8 FLASH 12V PROM, 70 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁數(shù)： | 18/35頁 |
| 文件大?。?/td> | 464K |
| 代理商： | AM28F010A-70EI |
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Am28F010A
This detailed information is for your reference. It may
prove easier to always issue the Reset command two
consecutive times. This eliminates the need to deter-
mine if you are in the Setup Program state or not.
In-System Programming Considerations
Flash memories can be programmed in-system or in a
standard PROM programmer. The device may be sol-
dered to the circuit board upon receipt of shipment and
programmed in-system. Alternatively, the device may
initially be programmed in a PROM programmer prior
to soldering the device to the circuit board.
Auto Select Command
AMD’s Flash memories are designed for use in appli-
cations where the local CPU alters memory contents.
In order to correctly program any Flash memories
in-system, manufacturer and device codes must be
accessible while the device resides in the target
system. PROM programmers typically access the sig-
nature codes by raising A9 to a high voltage. However,
multiplexing high voltage onto address lines is not a
generally desired system design practice.
The device contains an Auto Select operation to supple-
ment traditional PROM programming methodologies.
The operation is initiated by writing 80h or 90h into the
command register. Following this command, a read
cycle address 0000h retrieves the manufacturer code of
01h (AMD). A read cycle from address 0001h returns
the device code (see the Auto Select Code table of the
corresponding device data sheet). To terminate the op-
eration, it is necessary to write another valid command,
such as Reset (00h or FFh), into the register.
相關PDF資料 |
PDF描述 |
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| AM28F010A-70FC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-70FE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-70FEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-70FI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-70JC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F010A-70EIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-70FC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-70FCB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-70FE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-70FEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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