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參數(shù)資料
| 型號(hào)： | AM28F020-120EC |
| 廠(chǎng)商： | ADVANCED MICRO DEVICES INC |
| 元件分類(lèi)： | PROM |
| 英文描述： | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁(yè)數(shù)： | 2/35頁(yè) |
| 文件大?。?/td> | 509K |
| 代理商： | AM28F020-120EC |
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2
Am28F020
addresses and data needed for the programming and
erase operations. For system design simplification, the
Am28F020 is designed to support either WE# or CE#
controlled writes. During a system write cycle,
addresses are latched on the falling edge of WE# or
CE#, whichever occurs last. Data is latched on the rising
edge of WE# or CE#, whichever occurs first. To simplify
discussion, the WE# pin is used as the write cycle
control pin throughout the rest of this data sheet. All
setup and hold times are with respect to the WE# signal.
AMD’s Flash technology combines years of EPROM
and EEPROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The
Am28F020 electrically erases all bits simultaneously
using Fowler-Nordheim tunneling. The bytes are pro-
grammed one byte at a time using the EPROM
programming mechanism of hot electron injection.
PRODUCT SELECTOR GUIDE
BLOCK DIAGRAM
Family Part Number
Am28F020
Speed Options (V
CC
= 5.0 V
±
10%)
-70
-90
-120
-150
-200
Max Access Time (ns)
70
90
120
150
200
CE
#
(E
#
) Access (ns)
70
90
120
150
200
OE
#
(G
#
) Access (ns)
35
35
50
55
55
14727F-1
Erase
Voltage
Switch
Input/Output
Buffers
Data Latch
Y-Gating
2,097,152
Bit
Cell Matrix
X-Decoder
Y-Decoder
Chip Enable
Output Enable
Logic
Program/Erase
Pulse Timer
Low V
Detector
Command
Register
WE#
CE#
OE#
A0–A17
DQ0–DQ7
V
CC
V
SS
A
State
Control
V
PP
To Array
Program
Voltage
Switch
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F020-150JC | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120EEB | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120EE | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120EI | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120FC | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F020-120ECB | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120EE | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120EEB | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120EI | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-120EIB | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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