- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366384 > AM28F020-90FEB (ADVANCED MICRO DEVICES INC) 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM28F020-90FEB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 |
| 封裝： | REVERSE, TSOP-32 |
| 文件頁數(shù)： | 2/35頁 |
| 文件大小： | 509K |
| 代理商： | AM28F020-90FEB |
第1頁當(dāng)前第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
2
Am28F020
addresses and data needed for the programming and
erase operations. For system design simplification, the
Am28F020 is designed to support either WE# or CE#
controlled writes. During a system write cycle,
addresses are latched on the falling edge of WE# or
CE#, whichever occurs last. Data is latched on the rising
edge of WE# or CE#, whichever occurs first. To simplify
discussion, the WE# pin is used as the write cycle
control pin throughout the rest of this data sheet. All
setup and hold times are with respect to the WE# signal.
AMD’s Flash technology combines years of EPROM
and EEPROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The
Am28F020 electrically erases all bits simultaneously
using Fowler-Nordheim tunneling. The bytes are pro-
grammed one byte at a time using the EPROM
programming mechanism of hot electron injection.
PRODUCT SELECTOR GUIDE
BLOCK DIAGRAM
Family Part Number
Am28F020
Speed Options (V
CC
= 5.0 V
±
10%)
-70
-90
-120
-150
-200
Max Access Time (ns)
70
90
120
150
200
CE
#
(E
#
) Access (ns)
70
90
120
150
200
OE
#
(G
#
) Access (ns)
35
35
50
55
55
14727F-1
Erase
Voltage
Switch
Input/Output
Buffers
Data Latch
Y-Gating
2,097,152
Bit
Cell Matrix
X-Decoder
Y-Decoder
Chip Enable
Output Enable
Logic
Program/Erase
Pulse Timer
Low V
Detector
Command
Register
WE#
CE#
OE#
A0–A17
DQ0–DQ7
V
CC
V
SS
A
State
Control
V
PP
To Array
Program
Voltage
Switch
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F020-90FI | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-90JC | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-90JCB | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-90JE | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-90JI | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F020-90FI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-90FIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-90JC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-90JCB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F020-90JE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。