參數(shù)資料
型號(hào)： AM28F020A-150FC
廠(chǎng)商： ADVANCED MICRO DEVICES INC
元件分類(lèi)： PROM
英文描述： 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
中文描述： 256K X 8 FLASH 12V PROM, 150 ns, PDSO32
封裝： REVERSE, TSOP-32
文件頁(yè)數(shù)： 7/35頁(yè)
文件大?。?/td> 470K
代理商： AM28F020A-150FC
Am28F020A
7
PIN DESCRIPTION
A0–A17
Address Inputs for memory locations. Internal latches
hold addresses during write cycles.
CE
#
(E
#
)
Chip Enable active low input activates the chip’s control
logic and input buffers. Chip Enable high will deselect
the device and operates the chip in stand-by mode.
DQ0–DQ7
Data Inputs during memory write cycles. Internal
latches hold data during write cycles. Data Outputs
during memory read cycles.
NC
No Connect-corresponding pin is not connected inter-
nally to the die.
OE
#
(G
#
)
Output Enable active low input gates the outputs of
the device through the data buffers during memory
read cycles. Output Enable is high during command
sequencing and program/erase operations.
V
PP
Program voltage input. V
PP
must be at high voltage in
order to write to the command register. The command
register controls all functions required to alter the mem-
ory array contents. Memory contents cannot be altered
when V
PP
≤
V
CC
+2 V.
V
CC
Power supply for device operation. (5.0 V
±
5% or 10%)
V
SS
Ground.
WE
#
(W
#
)
Write Enable active low input controls the write function
of the command register to the memory array. The tar-
get address is latched on the falling edge of the Write
Enable pulse and the appropriate data is latched on the
rising edge of the pulse. Write Enable high inhibits writ-
ing to the device.
相關(guān)PDF資料
PDF描述
AM28F020A-150FCB 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-150FE 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-150FEB 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-150FI 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-150FIB 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM28F020A-150FCB 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-150FE 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-150FEB 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-150FI 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-150FIB 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
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