- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366387 > AM28F020A-200PEB (ADVANCED MICRO DEVICES INC) 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms PDF資料下載
參數(shù)資料
| 型號： | AM28F020A-200PEB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 256K X 8 FLASH 12V PROM, 200 ns, PDIP32 |
| 封裝： | PLASTIC, DIP-32 |
| 文件頁數(shù)： | 12/35頁 |
| 文件大?。?/td> | 470K |
| 代理商： | AM28F020A-200PEB |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當(dāng)前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
12
Am28F020A
FLASH MEMORY PROGRAM/ERASE
OPERATIONS
Embedded Erase Algorithm
The automatic chip erase does not require the device
to be entirely pre-programmed prior to executing the
Embedded set-up erase command and Embedded
erase command. Upon executing the Embedded erase
command the device automatically will program and
verify the entire memory for an all zero data pattern.
The system is not required to provide any controls or
timing during these operations.
When the device is automatically verified to contain an
all zero pattern, a self-timed chip erase and verify be-
gin. The erase and verify operation are complete when
the data on DQ7 is “1" (see Write Operation Status sec-
tion) atwhich time the device returns to Read mode.
The system is not required to provide any control or
timing during these operations.
When using the Embedded Erase algorithm, the erase
automatically terminates when adequate erase margin
has been achieved for the memory array (no erase ver-
ify command is required). The margin voltages are in-
ternally generated in the same manner as when the
standard erase verify command is used.
The Embedded Erase Set-Up command is a command
only operation that stages the device for automatic
electrical erasure of all bytes in the array. Embedded
Erase Setup is performed by writing 30h to the com-
mand register.
To commence automatic chip erase, the command 30h
must be written again to the command register. The au-
tomatic erase begins on the rising edge of the WE and
terminates when the data on DQ7 is “1" (see Write Op-
eration Status section) at which time the device returns
to Read mode.
Figure 1 and Table 4 illustrate the Embedded Erase al-
gorithm, a typical command string and bus operation.
Table 4.
Embedded Erase Algorithm
Note:
See AC and DC Characteristics for values of V
PP
parameters. The V
PP
power supply can be hard-wired to the device or
switchable. When V
PP
is switched, V
PPL
may be ground, no connect with a resistor tied to ground, or less than V
CC
+ 2.0 V Refer
to Functional Description.
Bus Operations
Command
Comments
Standby
Wait for V
PP
Ramp to V
PPH
(see Note)
Write
Embedded Erase Setup Command
Data = 30h
Embedded Erase Command
Data = 30h
Read
Data
#
Polling to Verify Erasure
Standby
Compare Output to FFh
Read
Available for Read Operations
START
Apply V
PPH
Erasure Completed
Data# Poll from Device
Write Embedded Erase Command
Write Embedded Erase Setup Command
17502D-6
Figure 1.
Embedded Erase Algorithm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F020A-200PI | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-200PIB | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-70EC | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-70ECB | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-70EE | 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F020A-200PI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-200PIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-250/BXA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AM28F020A-70EC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F020A-70ECB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。