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參數(shù)資料
| 型號： | AM28F256-120EC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 32K X 8 FLASH 12V PROM, 120 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁數(shù)： | 18/35頁 |
| 文件大?。?/td> | 493K |
| 代理商： | AM28F256-120EC |
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18
Am28F256
Figure 4.
AC Waveforms for Programming Operations
ANALYSIS OF PROGRAM TIMING WAVEFORMS
Program Setup/Program
Two-cycle write commands are required for program
operations (section A and B). The first program com-
mand (40h) is a Setup command and does not affect
the array data (section A).The second program com-
mand latches address and data required for program-
ming on the falling and rising edge of WE# respectively
(section B). The rising edge of this WE# pulse (section
B) also initiates the programming pulse. The device is
programmed on a byte by byte basis either sequentially
or randomly.
The program pulse occurs in section C.
Time-Out
A software timing routine (10 μs duration) must be initi-
ated on the rising edge of the WE# pulse of section B.
Note:
An integrated stop timer prevents any possibility
of overprogramming by limiting each time-out period of
10 μs.
Program-Verify
Upon completion of the program timing routine, the mi-
croprocessor must write the program-verify command
(C0h). This command terminates the programming op-
eration on the rising edge of the WE# pulse (section D).
The program-verify command also stages the device
for data verification (section F). Another software timing
routine (6 μs duration) must be executed to allow for
Addresses
CE
#
OE
#
WE
#
Data
V
PP
V
CC
11559G-9
Data
In
20h
Section
A0h
Data
Out
Bus Cycle
Write
Write
Time-out
Write
Time-out
Read
Standby
Command
40h
Program
Address,
Program Data
N/A
C0h
(Stops
Program)
N/A
Compare
Data
N/A
Function
Program
Setup
Program
Command
Latch
Address and
Data
Program
(10 μs)
Program
Verify
Transition
(6 μs)
Program
Verification
Proceed per
Programming
Algorithm
A
B
D
E
F
C
G
A
B
D
E
F
C
G
相關(guān)PDF資料 |
PDF描述 |
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| AM28F256-120EEB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-120EIB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-90FE | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F256-120ECB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-120EE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-120EEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-120EI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-120EIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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