參數(shù)資料
型號(hào): AM28F256-150PE
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
中文描述: 32K X 8 FLASH 12V PROM, 150 ns, PDIP32
封裝: PLASTIC, DIP-32
文件頁(yè)數(shù): 26/35頁(yè)
文件大?。?/td> 493K
代理商: AM28F256-150PE
26
Am28F256
SWITCHING TEST WAVEFORMS
SWITCHING CHARACTERISTICS over operating range unless otherwise specified
AC Characteristics—Read Only Operation
Notes:
1. Guaranteed by design not tested.
2. Not 100% tested.
Parameter Symbols
Parameter Description
Am28F256 Speed Options
Unit
JEDEC
Standard
-70
-90
-120
-150
-200
t
AVAV
t
RC
Read Cycle Time (Note 2)
Min
70
90
120
150
200
ns
t
ELQV
t
CE
Chip Enable AccessTime
Max
70
90
120
150
200
ns
t
AVQV
t
ACC
Address Access Time
Max
70
90
120
150
200
ns
t
GLQV
t
OE
Output Enable Access Time
Max
35
35
50
55
55
ns
t
ELQX
t
LZ
Chip Enable to Output in Low Z
(Note 2)
Min
0
0
0
0
0
ns
t
EHQZ
t
DF
Chip Disable to Output in High Z
(Note 1)
Max
20
20
30
35
35
ns
t
GLQX
t
OLZ
Output Enable to Output in Low Z
(Note 2)
Min
0
0
0
0
0
ns
t
GHQZ
t
DF
Output Disable to Output in High Z
(Note 2)
Max
20
20
30
35
35
ns
t
AXQX
t
OH
Output Hold from first of Address,
CE#, or OE# Change (Note 2)
Min
0
0
0
0
0
ns
t
WHGL
Write Recovery Time before Read
Min
6
6
6
6
6
μs
t
VCS
V
CC
Setup Time to Valid Read
(Note 2)
Min
50
50
50
50
50
μs
11560G-15
3 V
0 V
Input
Output
1.5 V
1.5 V
Test Points
AC Testing for -70 devices: Inputs are driven at 3.0 V for a
logic “1” and 0 V for a logic “0”. Input pulse rise and fall times
are
10 ns.
2.4 V
0.45 V
Input
Output
Test Points
2.0 V
2.0 V
0.8 V
0.8 V
AC Testing (all speed options except -70): Inputs are driven at
2.4 V for a logic “1” and 0.45 V for a logic “0”. Input pulse rise
and fall times are
10 ns.
相關(guān)PDF資料
PDF描述
AM28F256-150PEB Voltage-controlled oscillator 14-SOIC 0 to 70
AM28F256-150PI 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-150PIB Voltage-controlled oscillator 14-PDIP 0 to 70
AM28F256-200EC 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-200ECB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM28F256-150PEB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-150PI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-150PIB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-200C3/BUA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
AM28F256-200C3/BXA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM