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參數(shù)資料
| 型號： | AM28F256-200EC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 32K X 8 FLASH 12V PROM, 200 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁數(shù)： | 6/35頁 |
| 文件大?。?/td> | 493K |
| 代理商： | AM28F256-200EC |
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6
Am28F256
PIN DESCRIPTION
A0–A14
A
ddress Inputs for memory locations. Internal latches
hold addresses during write cycles.
CE
#
(E
#
)
Chip Enable active low input activates the chip’s control
logic and input buffers. Chip Enable high will deselect
the device and operates the chip in stand-by mode.
DQ0–DQ7
Data Inputs during memory write cycles. Internal
latches hold data during write cycles. Data Outputs
during memory read cycles.
NC
No Connect-corresponding pin is not connected
internally to the die.
OE
#
(G
#
)
Output Enable active low input gates the outputs of the
device through the data buffers during memory
read cycles. Output Enable is high during command
sequencing and program/erase operations.
V
CC
Power supply for device operation. (5.0 V
±
5% or 10%)
V
PP
Program voltage input. V
PP
must be at high voltage in
order to write to the command register. The command
register controls all functions required to alter the
memory array contents. Memory contents cannot be
altered when V
PP
≤
V
CC
+2 V.
V
SS
Ground
WE
#
(W
#
)
Write Enable active low input controls the write function
of the command register to the memory array. The
target address is latched on the falling edge of the
Write Enable pulse and the appropriate data is latched
on the rising edge of the pulse. Write Enable high
inhibits writing to the device.
相關PDF資料 |
PDF描述 |
|---|---|
| AM28F256-200ECB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-200EE | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-200EEB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-200EI | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-200EIB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F256-200ECB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-200EE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-200EEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-200EI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-200EIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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