- 您現(xiàn)在的位置：買賣IC網 > PDF目錄366389 > AM28F256-200EIB (ADVANCED MICRO DEVICES INC) 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM28F256-200EIB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 32K X 8 FLASH 12V PROM, 200 ns, PDSO32 |
| 封裝： | 8 X 20 MM, 1.20 MM HEIGHT, TSOP-32 |
| 文件頁數(shù)： | 21/35頁 |
| 文件大?。?/td> | 493K |
| 代理商： | AM28F256-200EIB |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁當前第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
Am28F256
21
ABSOLUTE MAXIMUM RATINGS
Storage Temperature . . . . . . . . . . . . –65
°
C to +150
°
C
Plastic Packages . . . . . . . . . . . . . . . –65
°
C to +125
°
C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . .–55
°
C to + 125
°
C
Voltage with Respect To Ground
All pins except A9 and V
PP
(Note 1) .–2.0 V to +7.0 V
V
CC
(Note 1). . . . . . . . . . . . . . . . . . . .–2.0 V to +7.0 V
A9 (Note 2). . . . . . . . . . . . . . . . . . . .–2.0 V to +14.0 V
V
PP
(Note 2). . . . . . . . . . . . . . . . . . .–2.0 V to +14.0 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V During
voltage transitions, inputs may overshoot V
SS
to –2.0 V for
periods of up to 20 ns. Maximum DC voltage on input and
I/O pins is V
CC
+ 0.5 V During voltage transitions, input
and I/O pins may overshoot to V
CC
+ 2.0V for periods up
to 20ns.
2. Minimum DC input voltage on A9 and V
PP
pins is –0.5 V
During voltage transitions, A9 and V
PP
may overshoot
V
SS
to –2.0 V for periods of up to 20 ns. Maximum DC
input voltage on A9 and V
PP
is +13.0 V which may
overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output shorted to ground at a time. Du-
ration of the short circuit should not be greater than one
second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at these
or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure of
the device to absolute maximum rating conditions for extended
periods may affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T
A
). . . . . . . . . . . .0
°
C to +70
°
C
Industrial (I) Devices
Ambient Temperature (T
A
). . . . . . . . . .–40
°
C to +85
°
C
Extended (E) Devices
Ambient Temperature (T
A
). . . . . . . . .–55
°
C to +125
°
C
V
CC
Supply Voltages
V
CC
. . . . . . . . . . . . . . . . . . . . . . . . +4.50 V to +5.50 V
V
PP
Voltages
Read . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +12.6 V
Program, Erase, and Verify. . . . . . +11.4 V to +12.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
相關PDF資料 |
PDF描述 |
|---|---|
| AM28F256-200FC | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-200FCB | Voltage-controlled oscillator 14-SOIC 0 to 70 |
| AM28F256-200FE | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-200FEB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-200FI | Voltage-controlled oscillator 14-SOIC 0 to 70 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F256-200FC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-200FCB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-200FE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-200FEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-200FI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。