參數(shù)資料
型號(hào): AM28F256-70ECB
廠商: Advanced Micro Devices, Inc.
英文描述: Dual voltage-controlled oscillators 16-PDIP 0 to 70
中文描述: 256千比特(32畝× 8位)的CMOS 12.0伏,整體擦除閃存
文件頁數(shù): 12/35頁
文件大?。?/td> 493K
代理商: AM28F256-70ECB
12
Am28F256
Figure 1.
Flasherase
Electrical Erase Algorithm
Start
Program All Bytes to 00h
Apply V
PPH
Address = 00h
PLSCNT = 0
Write Erase Setup Command
Write Erase Command
Time out 10 ms
Write Erase Verify
Time out 6 μs
Read Data from Device
Data = FFh
Last Address
Write Reset Command
Apply V
PPL
Erasure Completed
PLSCNT =
1000
Increment Address
Apply V
PPL
Erase Error
No
Yes
No
11559G-6
Yes
Yes
Yes
No
No
Increment
PLSCNT
Data = 00h
相關(guān)PDF資料
PDF描述
AM28F256-70EE 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70EEB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70EI 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70EIB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70FC 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM28F256-70EE 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70EEB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70EI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70EIB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70FC 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory