參數(shù)資料
型號： AM28F256-70EI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
中文描述： 32K X 8 FLASH 12V PROM, 70 ns, PDSO32
封裝： TSOP-32
文件頁數(shù)： 21/35頁
文件大?。?/td> 493K
代理商： AM28F256-70EI
Am28F256
21
ABSOLUTE MAXIMUM RATINGS
Storage Temperature . . . . . . . . . . . . –65
°
C to +150
°
C
Plastic Packages . . . . . . . . . . . . . . . –65
°
C to +125
°
C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . .–55
°
C to + 125
°
C
Voltage with Respect To Ground
All pins except A9 and V
PP
(Note 1) .–2.0 V to +7.0 V
V
CC
(Note 1). . . . . . . . . . . . . . . . . . . .–2.0 V to +7.0 V
A9 (Note 2). . . . . . . . . . . . . . . . . . . .–2.0 V to +14.0 V
V
PP
(Note 2). . . . . . . . . . . . . . . . . . .–2.0 V to +14.0 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V During
voltage transitions, inputs may overshoot V
SS
to –2.0 V for
periods of up to 20 ns. Maximum DC voltage on input and
I/O pins is V
CC
+ 0.5 V During voltage transitions, input
and I/O pins may overshoot to V
CC
+ 2.0V for periods up
to 20ns.
2. Minimum DC input voltage on A9 and V
PP
pins is –0.5 V
During voltage transitions, A9 and V
PP
may overshoot
V
SS
to –2.0 V for periods of up to 20 ns. Maximum DC
input voltage on A9 and V
PP
is +13.0 V which may
overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output shorted to ground at a time. Du-
ration of the short circuit should not be greater than one
second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at these
or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure of
the device to absolute maximum rating conditions for extended
periods may affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T
A
). . . . . . . . . . . .0
°
C to +70
°
C
Industrial (I) Devices
Ambient Temperature (T
A
). . . . . . . . . .–40
°
C to +85
°
C
Extended (E) Devices
Ambient Temperature (T
A
). . . . . . . . .–55
°
C to +125
°
C
V
CC
Supply Voltages
V
CC
. . . . . . . . . . . . . . . . . . . . . . . . +4.50 V to +5.50 V
V
PP
Voltages
Read . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +12.6 V
Program, Erase, and Verify. . . . . . +11.4 V to +12.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
相關(guān)PDF資料
PDF描述
AM28F256-70EIB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70FC 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70FCB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70FE 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70FEB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM28F256-70EIB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70FC 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70FCB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70FE 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70FEB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*