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參數資料
| 型號： | AM28F256-70FCB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 256千比特（32畝× 8位）的CMOS 12.0伏，整體擦除閃存 |
| 文件頁數： | 2/35頁 |
| 文件大?。?/td> | 493K |
| 代理商： | AM28F256-70FCB |
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2
Am28F256
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as inputs to an internal state-machine which
controls the erase and programming circuitry. During
write cycles, the command register internally latches ad-
dress and data needed for the programming and erase
operations. For system design simplification, the
Am28F256 is designed to support either WE
#
or CE
#
controlled writes. During a system write cycle, ad-
dresses are latched on the falling edge of WE
#
or CE
#
whichever occurs last. Data is latched on the rising edge
of WE
#
or CE
#
whichever occurs first. To simplify the fol-
lowing discussion, the WE
#
pin is used as the write cycle
control pin throughout the rest of this text. All setup and
hold times are with respect to the WE
#
signal.
AMD’s Flash technology combines years of EPROM
and EEPROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The
Am28F256 electrically erases all bits simultaneously
using Fowler-Nordheim tunneling. The bytes are
programmed one byte at a time using the EPROM
programming mechanism of hot electron injection.
BLOCK DIAGRAM
PRODUCT SELECTOR GUIDE
Family Part Number
Am28F256
Speed Options (V
CC
= 5.0 V
±
10%)
Max Access Time (ns)
-70
-90
-120
-150
-200
70
90
120
150
200
CE# (E#) Access (ns)
70
90
120
150
200
OE# (G#) Access (ns)
35
35
50
55
55
Erase
Voltage
Switch
Command
Register
Program
Voltage
Switch
Chip Enable
Output Enable
Logic
Y-Decoder
X-Decoder
Y-Gating
262,144
Bit
Cell Matrix
11560F-1
A0–A14
OE#
CE#
WE#
V
SS
V
PP
V
CC
To Array
DQ0–DQ7
Input/Output
Buffers
Data
Latch
Address
Latch
Low V
CC
Detector
Program/Erase
Pulse Timer
State
Control
相關PDF資料 |
PDF描述 |
|---|---|
| AM28F256-70FE | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-70FEB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-70FI | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-70FIB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-70JC | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM28F256-70FE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-70FEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-70FI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-70FIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-70JC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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