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參數(shù)資料
| 型號(hào)： | AM28F256-70FI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 32K X 8 FLASH 12V PROM, 70 ns, PDSO32 |
| 封裝： | REVERSE, TSOP-32 |
| 文件頁數(shù)： | 24/35頁 |
| 文件大?。?/td> | 493K |
| 代理商： | AM28F256-70FI |
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24
Am28F256
DC CHARACTERISTICS
CMOS Compatible
Notes:
1.
Caution:
The Am28F256 must not be removed from (or inserted into) a socket when V
CC
or V
PP
is applied. If V
CC
≤
1.0 volt,
the voltage difference between V
PP
and V
CC
should not exceed 10.0 volts. Also, the Am28F256 has a V
PP
rise time and fall
time specification of 500 ns minimum.
2. I
CC1
is tested with OE# = V
IH
to simulate open outputs.
3. Maximum active power usage is the sum of I
CC
and I
PP
.
4. Not 100% tested.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
CC
= V
CC
Max, V
IN
= V
CC
or V
SS
±
1.0
μA
I
LO
Output Leakage Current
V
CC
= V
CC
Max, V
OUT
= V
CC
or V
SS
±
1.0
μA
I
CCS
V
CC
Standby Current
V
CC
= V
CC
Max, CE#
= V
CC
+ 0.5 V
15
100
μA
I
CC1
V
CC
Active Read Current
V
CC
= V
CC
Max, CE# = V
IL,
OE# = V
IH
I
OUT
= 0 mA, at 6 MHz
20
30
mA
I
CC2
V
CC
Programming Current
CE# = V
IL
Programming in Progress (Note 4)
20
30
mA
I
CC3
V
CC
Erase Current
CE# = V
IL
Erasure in Progress (Note 4)
20
30
mA
I
PPS
V
PP
Standby Current
V
PP
= V
PPL
±
1.0
μA
I
PP1
V
PP
Read Current
V
PP
= V
PPH
70
200
μA
I
PP2
V
PP
Programming Current
V
PP
= V
PPH
Programming in Progress (Note 4)
10
30
mA
I
PP3
V
PP
Erase Current
V
PP
= V
PPH
Erasure in Progress (Note 4)
10
30
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7 V
CC
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 5.8 mA, V
CC
= V
CC
Min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.5 mA, V
CC
= V
CC
Min
0.85 V
CC
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC
Min
V
CC
–0.4
V
ID
A9 Auto Select Voltage
A9 = V
ID
11.5
13.0
V
I
ID
A9 Auto Select Current
A9 = V
ID
Max, V
CC
= V
CC
Max
5
50
μA
V
PPL
V
PPL
during Read-Only
Operations
Note:
Erase/Program are inhibited
when V
PP
= V
PPL
0.0
V
CC
+ 2.0
V
V
PPH
V
PP
during Read/Write
Operations
11.4
12.6
V
V
LKO
Low V
CC
Lock-out Voltage
3.2
3.7
V
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| AM28F256-70FIB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-70JC | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F256-70FIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-70JC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-70JCB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-70JE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F256-70JEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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