參數(shù)資料
型號(hào): AM28F512-200PI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
中文描述: 64K X 8 FLASH 12V PROM, 200 ns, PDIP32
封裝: PLASTIC, DIP-32
文件頁(yè)數(shù): 35/35頁(yè)
文件大?。?/td> 484K
代理商: AM28F512-200PI
Am28F512
35
DATA SHEET REVISION SUMMARY FOR
AM28F512
Deleted -75, -95, and -250 speed options. Matched for-
matting to other current data sheets.
Amendment G+1
Removed reference to LCC package in Distinctive
Characteristics. Added A15 to PLCC and PDIP con-
nection diagrams.
Figure 3, Flashrite Programming Algorithm: Moved end
of arrow originating from Increment Address box so
that it points to the PLSCNT = 0 box, not the Write Pro-
gram Verify Command box. This is a correction to the
diagram on page 6-189 of the 1998 Flash Memory
Data Book.
Revision G+2
Programming In A PROM Programmer:
Deleted the paragraph “(Refer to the AUTO SELECT
paragraph in the ERASE, PROGRAM, and READ
MODE section for programming the Flash memory de-
vice in-system).”
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料
PDF描述
AM28F512-200PIB 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F512-70EC Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-PDIP 0 to 70
AM28F512-70ECB 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F512-70EE Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-PDIP 0 to 70
AM28F512-70EEB Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SO 0 to 70
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