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參數(shù)資料
| 型號(hào)： | AM28F512-70JCB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 512千比特（64畝× 8位）的CMOS 12.0伏，整體擦除閃存 |
| 文件頁(yè)數(shù)： | 17/35頁(yè) |
| 文件大?。?/td> | 484K |
| 代理商： | AM28F512-70JCB |
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Am28F512
17
Table 5.
Flashrite Programming Algorithm
Notes:
1. See AC and DC Characteristics for values of V
PP
parameters. The V
PP
power supply can be hard-wired to the device or
switchable. When V
PP
is switched, V
PPL
may be ground, no connect with a resistor tied to ground, or less than V
CC
+ 2.0 V
2. Program Verify is performed only after byte programming. A final read/compare may be performed (optional) after the register
is written with the read command.
Bus Operations
Command
Comments
Standby
Wait for V
PP
Ramp to V
PPH
(Note 1)
Initialize Pulse counter
Write
Program Setup
Data = 40h
Program
Valid Address/Data
Standby
Duration of Programming Operation (t
WHWH1
)
Write
Program-Verify (Note 2)
Data = C0h Stops Program Operation
Standby
Write Recovery Time before Read = 6 μs
Read
Read Byte to Verify Programming
Standby
Compare Data Output to Data Expected
Write
Reset
Data = FFh, resets the register for read operations.
Standby
Wait for V
PP
Ramp to V
PPL
(Note 1)
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