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    參數(shù)資料
    型號: AM28F512-70PC
    廠商: ADVANCED MICRO DEVICES INC
    元件分類: PROM
    英文描述: 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
    中文描述: 64K X 8 FLASH 12V PROM, 70 ns, PDIP32
    封裝: PLASTIC, DIP-32
    文件頁數(shù): 31/35頁
    文件大?。?/td> 484K
    代理商: AM28F512-70PC
    Am28F512
    31
    ERASE AND PROGRAMMING PERFORMANCE
    Notes:
    1. 25°C, 12 V V
    PP
    .
    2. Maximum time specified is lower than worst case. Worst case is derived from the Flasherase/Flashrite pulse count
    (Flasherase = 1000 max and Flashrite = 25 max). Typical worst case for program and erase is significantly less than the actual
    device limit.
    LATCHUP CHARACTERISTICS
    PIN CAPACITANCE
    Note:
    Sampled, not 100% tested. Test conditions T
    A
    = 25°C, f = 1.0 MHz.
    DATA RETENTION
    Parameter
    Limits
    Comments
    Min
    Typ
    (Note 1)
    Max
    (Note 2)
    Unit
    Chip Erase Time
    1
    10
    sec
    Excludes 00H programming prior to erasure
    Chip Programming Time
    1
    6
    sec
    Excludes system-level overhead
    Write/Erase Cycles
    10,000
    Cycles
    Parameter
    Min
    Max
    Input Voltage with respect to V
    SS
    on all pins except I/O pins (Including A9 and V
    PP
    )
    –1.0 V
    13.5 V
    Input Voltage with respect to V
    SS
    on all pins I/O pins
    –1.0 V
    V
    CC
    + 1.0 V
    Current
    –100 mA
    +100 mA
    Includes all pins except V
    CC
    . Test conditions: V
    CC
    = 5.0 V, one pin at a time.
    Parameter
    Symbol
    Parameter Description
    Test Conditions
    Typ
    Max
    Unit
    C
    IN
    Input Capacitance
    V
    IN
    = 0
    8
    10
    pF
    C
    OUT
    Output Capacitance
    V
    OUT
    = 0
    8
    12
    pF
    C
    IN2
    V
    PP
    Input Capacitance
    V
    PP
    = 0
    8
    12
    pF
    Parameter
    Test Conditions
    Min
    Unit
    Minimum Pattern Data Retention Time
    150°C
    10
    Years
    125°C
    20
    Years
    相關(guān)PDF資料
    PDF描述
    AM28F512-70PCB 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
    AM28F512-70PE 4-bit magnitude comparators 16-SOIC 0 to 70
    AM28F512-70PEB 4-bit magnitude comparators 16-SOIC 0 to 70
    AM28F512-70PI 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
    AM28F512-70PIB 4-bit magnitude comparators 16-SOIC 0 to 70
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