參數(shù)資料
型號(hào): AM28F512A-70PI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85
中文描述: 64K X 8 FLASH 12V PROM, 70 ns, PDIP32
封裝: PLASTIC, DIP-32
文件頁(yè)數(shù): 18/34頁(yè)
文件大?。?/td> 463K
代理商: AM28F512A-70PI
25
Am28F512A
AC Characteristics—Write/Erase/Program Operations
Notes:
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read Only operations.
2. Embedded Program Operation of 14 s consists of 10 s program pulse and 4 ms write recovery before read. This is the
minimum time for one pass through the programming algorithm.
3. Embedded Erase Operation of 5 sec consists of 4 sec array pre-programming time and one sec array erase time. This is a
typical time for one embedded erase operation.
4. Not 100% tested.
Parameter Symbols
Parameter Description
Am28F512A Speed Options
Unit
JEDEC
Standard
-70
-90
-120
-150
-200
tAVAV
tWC
Write Cycle Time (Note 4)
Min
70
90
120
150
200
ns
tAVWL
tAS
Address Setup Time
Min
0
0000
ns
tWLAX
tAH
Address Hold Time
Min
45
50
60
75
ns
tDVWH
tDS
Data Setup Time
Min
45
50
ns
tWHDX
tDH
Data Hold Time
Min
10
ns
tOEH
Output Enable Hold Time
for Embedded Algorithm only
Min
10
s
tGHWL
Read Recovery Time before Write
Min
0
0000
s
tELWLE
tCSE
Chip Enable Embedded Algorithm
Setup Time
Min
20
ns
tWHEH
tCH
Chip Enable Hold Time
Min
0
0000
ns
tWLWH
tWP
Write Pulse Width
Min
45
50
60
ns
tWHWL
tWPH
Write Pulse Width HIGH
Min
20
ns
tWHWH3
Embedded Programming Operation
(Note 2)
Min
14
s
tWHWH4
Embedded Erase Operation (Note 2)
Typ
5
5555
ms
tVPEL
VPP Setup Time to Chip Enable LOW
(Note 4)
Min
100
ns
tVCS
VCC Setup Time to Chip Enable LOW
(Note 4)
Min
50
s
tVPPR
VPP Rise Time 90% VPPH (Note 4)
Min
500
ns
tVPPF
VPP Fall Time 10% VPPL (Note 4)
Min
500
ns
tLKO
VCC < VLKO to Reset (Note 4)
Min
100
ns
相關(guān)PDF資料
PDF描述
AM28F512A-70PIB Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85
AM28F512A-90EC Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85
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