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| 型號(hào)： | AM29BDD160GB64CKI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80 |
| 封裝： | PLASTIC, QFP-80 |
| 文件頁(yè)數(shù)： | 73/80頁(yè) |
| 文件大?。?/td> | 3476K |
| 代理商： | AM29BDD160GB64CKI |
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Am29BDD160G
73
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 2.5 V V
CC, 1M cycles. Additionally, programming
typically assume checkerboard pattern.
2. Under worst case conditions of 145°C, V
CC = 2.5 V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Tables 19 and 20 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1M cycles.
7. PPBs have a minimum program/erase cycle endurance of 100 cycles.
LATCHUP CHARACTERISTICS
Note:Includes all pins except V
CC. Test conditions: VCC = 3.0 V, one pin at a time.
PQFP AND FORTIFIED BGA PIN CAPACITANCE
Note:
1. Sampled, not 100% tested.
2. Test conditions T
A = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1.0
5
s
Excludes 00h
programming prior to
erasure (Note 4)
Chip Erase Time
23
230
s
Double Word Program Time
18
250
s
Excludes system level
overhead (Note 5)
Word (x16) Program Time
15
210
s
Accelerated Double Word Program Time
8
130
s
Accelerated Chip Program Time
5
50
s
Chip Program Time
(Note 3)
x16
10
100
x32
12
120
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, ACC, and WP#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150°C
10
Years
125°C
20
Years
相關(guān)PDF資料 |
PDF描述 |
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| AM29BDD160GB64CKK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB65APBE | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB65APBI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GT54DKE | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GT54DKF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
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