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參數(shù)資料
| 型號(hào)： | AM29DL163CT70RZI |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PDSO56 |
| 封裝： | SSOP-56 |
| 文件頁數(shù)： | 23/55頁 |
| 文件大?。?/td> | 775K |
| 代理商： | AM29DL163CT70RZI |
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DATA SHEET
Publication# 21533 Revision: C Amendment: 2
Issue Date: September 7, 2007
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Am29DL16xC
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
■ Multiple bank architectures
— Two devices available with different bank sizes (refer
to Table 3)
■ Secured Silicon (SecSi) Sector: Extra 64 KByte
sector
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
— Customer lockable: Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed
■ Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
■ Package options
— 48-ball FBGA
— 56-pin SSOP
— 48-pin TSOP
■ Top or bottom boot block
■ Manufactured on 0.32 m process technology
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
■ High performance
— Access time as fast 70 ns
— Program time: 7 s/word typical utilizing Accelerate
function
■ Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■ Minimum 1 million write cycles guaranteed per sector
■ 20 Year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
■ Data Management Software (DMS)
— AMD-supplied software manages data programming
and erasing, enabling EEPROM emulation
— Eases sector erase limitations
■ Supports Common Flash Memory Interface (CFI)
■ Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
■ Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
■ Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
■ Any combination of sectors can be erased
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
■ Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to reading array data
■ WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect
status
— Acceleration (ACC) function provides accelerated
program times
■ Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
This product has been retired and is not recommended for designs. For new designs that do not require simultaneous read/write (SRW) operations, the S29AL016D supersedes
Am29DL16xC. For new designs that require SRW, the S29JL032H supersedes Am29DL16xC. Please refer to the Am29AL16xD and S29JL032H data sheets for specifications and ordering
information. Availability of this document is retained for reference and historical purposes only.
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PDF描述 |
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| AM29F040B-150JEB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-150JIB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-150PCB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-150PEB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-70EEB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29DL163DB-90EI\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 90NS 48TSOP - Tape and Reel |
| AM29DL163DB-90EI\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 90NS 48TSOP - Tape and Reel |
| AM29DL163DB-90EIT | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 90NS 48TSOP - Tape and Reel |
| AM29DL163DT70EF | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays |
| AM29DL163DT-70EF | 制造商:Spansion 功能描述: |
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