參數(shù)資料
型號： AM29DL163CT70ZC
廠商： SPANSION LLC
元件分類： PROM
英文描述： 1M X 16 FLASH 3V PROM, 70 ns, PDSO56
封裝： SSOP-56
文件頁數(shù)： 18/55頁
文件大小： 775K
代理商： AM29DL163CT70ZC
September 7, 2007 21533C2
Am29DL16xC
23
D A TA
SH EE T
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Table 14 defines the valid register command
sequences. Writing incorrect address and data val-
ues or writing them in the improper sequence resets
the device to reading array data.
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on the ris-
ing edge of WE# or CE#, whichever happens first. Refer to
the AC Characteristics section for timing diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the correspo nding bank enter s the erase-sus-
pend-read mode, after which the system can read
data from any non-erase-suspended sector within the
same bank. After completing a programming operation
in the Erase Suspend mode, the system may once
again read array data with the same exception. See
tion for more information.
The system must issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase opera-
tion, or if the bank is in the autoselect mode. See the
next section, Reset Command, for more information.
Device Bus Operations section for more information.
The Read-Only Operations table provides the read pa-
rameters, and Figure 13 shows the timing diagram.
Reset Command
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the bank to which the sys-
tem was writing to reading array data. Once erasure
begins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the bank to
which the system was writing to reading array data. If
the program command sequence is written to a bank
that is in the Erase Suspend mode, writing the reset
com m an d r e tur n s th at b ank to the era s e-sus-
pend-read mode. Once programming begins, however,
the device ignores reset commands until the operation
is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to reading array data. If a
bank entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns
that bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to read-
ing array data (or erase-suspend-read mode if that
bank was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
Table 14 shows the address and data requirements.
This method is an alternative to that shown in Table 7,
which is intended for PROM programmers and re-
quires V
ID on address pin A9. The autoselect com-
mand sequence may be written to an address within a
bank that is either in the read or erase-suspend-read
mode. The autoselect command may not be written
while the device is actively programming or erasing in
the other bank.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the au-
toselect command. The bank then enters the autose-
lect mode. The system may read at any address within
the same bank any number of times without initiating
another autoselect command sequence:
■ A read cycle at address (BA)XX00h (where BA is
the bank address) returns the manufacturer code.
■ A read cycle at address (BA)XX01h in word mode
(or (BA)XX02h in byte mode) returns the device
code.
■ A read cycle to an address containing a sector ad-
dress (SA) within the same bank, and the address
02h on A7–A0 in word mode (or the address 04h on
A6–A-1 in byte mode) returns 01h if the sector is
protected, or 00h if it is unprotected. (Refer to Ta-
bles 3–6 for valid sector addresses).
The system must write the reset command to return to
reading array data (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
相關PDF資料
PDF描述
AM29DL163CT70RZI 1M X 16 FLASH 3V PROM, 70 ns, PDSO56
AM29F040B-150JEB 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-150JIB 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-150PCB 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-150PEB 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
AM29DL163DB-90EI\\T 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 90NS 48TSOP - Tape and Reel
AM29DL163DB-90EI\T 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 90NS 48TSOP - Tape and Reel
AM29DL163DB-90EIT 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 90NS 48TSOP - Tape and Reel
AM29DL163DT70EF 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays
AM29DL163DT-70EF 制造商:Spansion 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*