參數(shù)資料
型號: AM29DL320GB120WDIN
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
封裝: 8 X 14 MM, 0.80 MM PITCH, FBGA-63
文件頁數(shù): 43/55頁
文件大小: 1230K
代理商: AM29DL320GB120WDIN
48
Am29DL320G
July 31, 2002
ADV ANC E
INFO RMAT ION
AC CHARACTERISTICS
tGHEL
tWS
OE#
CE#
WE#
RESET#
tDS
Data
tAH
Addresses
tDH
tCP
DQ7#
DOUT
tWC
tAS
tCPH
PA
Data# Polling
A0 for program
55 for erase
tRH
tWHWH1 or 2
RY/BY#
tWH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
tBUSY
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 26.
Alternate CE# Controlled Write (Erase/Program) Operation Timings
相關(guān)PDF資料
PDF描述
AM29DL320GB120WMI 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL320GB90WMIN 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL320GT120EI 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL320GT120EIN 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL320GT120WDI 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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