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參數(shù)資料
| 型號： | AM29DL640H70EEN |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| 中文描述： | 64兆位（8米× 8位/ 4米x 16位），3.0伏的CMOS只，同步讀/寫閃存 |
| 文件頁數(shù)： | 12/54頁 |
| 文件大?。?/td> | 880K |
| 代理商： | AM29DL640H70EEN |
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10
Am29DL640H
February 9, 2005
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device en-
ergy consumption. The device automatically enables
this mode when addresses remain stable for t
ACC
+
30 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard ad-
dress access timings provide new data when ad-
dresses are changed. While in sleep mode, output
data is latched and always available to the system.
I
CC5
in the DC Characteristics table represents the
automatic sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of re-
setting the device to reading array data. When the RE-
SET# pin is driven low for at least a period of t
RP
, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is
ready to accept another command sequence, to en-
sure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at V
SS
±0.3 V, the device
draws CMOS standby current (I
CC4
). If RESET# is held
at V
IL
but not within V
SS
±0.3 V, the standby current will
be greater.
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
If RESET# is asserted during a program or erase op-
eration, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of t
READY
(during Embedded Algorithms). The sys-
tem can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of t
READY
(not during Embedded Algo-
rithms). The system can read data t
RH
after the RE-
SET# pin returns to V
IH
.
Refer to the AC Characteristics tables for RESET# pa-
rameters and to Figure 15 for the timing diagram.
Output Disable Mode
When the OE# input is at V
IH
, output from the device is
disabled. The output pins are placed in the high
impedance state.
Table 2.
Am29DL640H Sector Architecture
Bank
Sector
Sector Address
A21–A12
0000000000
0000000001
0000000010
0000000011
0000000100
0000000101
0000000110
0000000111
0000001xxx
0000010xxx
0000011xxx
0000100xxx
0000101xxx
0000110xxx
0000111xxx
0001000xxx
0001001xxx
0001010xxx
0001011xxx
0001100xxx
0001101xxx
0001110xxx
0001111xxx
Sector Size
(Kbytes/Kwords)
8/4
8/4
8/4
8/4
8/4
8/4
8/4
8/4
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
(x8)
Address Range
000000h–001FFFh
002000h–003FFFh
004000h–005FFFh
006000h–007FFFh
008000h–009FFFh
00A000h–00BFFFh
00C000h–00DFFFh
00E000h–00FFFFh
010000h–01FFFFh
020000h–02FFFFh
030000h–03FFFFh
040000h–04FFFFh
050000h–05FFFFh
060000h–06FFFFh
070000h–07FFFFh
080000h–08FFFFh
090000h–09FFFFh
0A0000h–0AFFFFh
0B0000h–0BFFFFh
0C0000h–0CFFFFh
0D0000h–0DFFFFh
0E0000h–0EFFFFh
0F0000h–0FFFFFh
(x16)
Address Range
00000h–00FFFh
01000h–01FFFh
02000h–02FFFh
03000h–03FFFh
04000h–04FFFh
05000h–05FFFh
06000h–06FFFh
07000h–07FFFh
08000h–0FFFFh
10000h–17FFFh
18000h–1FFFFh
20000h–27FFFh
28000h–2FFFFh
30000h–37FFFh
38000h–3FFFFh
40000h–47FFFh
48000h–4FFFFh
50000h–57FFFh
58000h–5FFFFh
60000h–67FFFh
68000h–6FFFFh
70000h–77FFFh
78000h–7FFFFh
Bank 1
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29DL640H70EI | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| AM29DL640H70EIN | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| AM29DL640H70WHE | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| AM29DL640H70WHEN | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| AM29DL640H70WHI | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
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