參數(shù)資料
型號： AM29DL640H90WHIN
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
中文描述： 64兆位（8米× 8位/ 4米x 16位），3.0伏的CMOS只，同步讀/寫閃存
文件頁數(shù)： 5/54頁
文件大?。?/td> 880K
代理商： AM29DL640H90WHIN
February 9, 2005
Am29DL640H
3
TABLE OF CONTENTS
Product Selector Guide. . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 5
Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Ordering Information. . . . . . . . . . . . . . . . . . . . . . . 7
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 8
Table 1. Am29DL640H Device Bus Operations ................................8
Requirements for Reading Array Data .....................................8
Writing Commands/Command Sequences ..............................9
Accelerated Program Operation ...............................................9
Autoselect Functions ................................................................9
Simultaneous Read/Write Operations with Zero Latency .........9
Automatic Sleep Mode ...........................................................10
RESET#: Hardware Reset Pin ...............................................10
Output Disable Mode ..............................................................10
Table 2. Am29DL640H Sector Architecture ....................................10
Table 3. Bank Address ....................................................................13
Table 5. Am29DL640H Autoselect Codes, (High Voltage Method) 14
Table 6. Am29DL640H Boot Sector/Sector Block Addresses for
Protection/Unprotection ...................................................................15
Write Protect (WP#) ................................................................15
Table 7. WP#/ACC Modes ..............................................................16
Temporary Sector Unprotect ..................................................16
Figure 1. Temporary Sector Unprotect Operation........................... 16
Figure 2. In-System Sector Protect/Unprotect Algorithms.............. 17
Secured Silicon Sector
FlashMemoryRegion ............................................................18
Figure 3. Secured Silicon Sector Protect Verify.............................. 19
Hardware Data Protection ......................................................19
Low VCC Write Inhibit ............................................................19
Write Pulse “Glitch” Protection ...............................................19
Logical Inhibit ..........................................................................19
Power-Up Write Inhibit ............................................................19
Common Flash Memory Interface (CFI). . . . . . . 19
Command Definitions . . . . . . . . . . . . . . . . . . . . . 23
Reading Array Data ................................................................23
Reset Command .....................................................................23
Autoselect Command Sequence ............................................23
Enter Secured Silicon Sector/Exit Secured Silicon Sector
Command Sequence ..............................................................23
Byte/Word Program Command Sequence .............................24
Unlock Bypass Command Sequence .....................................24
Figure 4. Program Operation.......................................................... 25
Chip Erase Command Sequence ...........................................25
Sector Erase Command Sequence ........................................25
Figure 5. Erase Operation............................................................... 26
Erase Suspend/Erase Resume Commands ...........................26
Write Operation Status . . . . . . . . . . . . . . . . . . . . 28
DQ7: Data# Polling .................................................................28
Figure 6. Data# Polling Algorithm................................................... 28
DQ6: Toggle Bit I ....................................................................29
Figure 7. Toggle Bit Algorithm........................................................ 29
DQ2: Toggle Bit II ...................................................................30
Reading Toggle Bits DQ6/DQ2 ...............................................30
DQ5: Exceeded Timing Limits ................................................30
DQ3: Sector Erase Timer .......................................................30
Table 13. Write Operation Status ...................................................31
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 32
Figure 8. Maximum Negative OvershootWaveform...................... 32
Figure 9. Maximum Positive OvershootWaveform........................ 32
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 10. I
CC1
Current vs. Time (Showing Active and
AutomaticSleepCurrents)............................................................. 34
Figure 11. Typical I
vs. Frequency............................................ 34
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 12. Test Setup.................................................................... 35
Figure 13. Input Waveforms and Measurement Levels................. 35
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 36
Read-Only Operations ...........................................................36
Figure 14. Read Operation Timings............................................... 36
Hardware Reset (RESET#) ....................................................37
Figure 15. Reset Timings............................................................... 37
Word/Byte Configuration (BYTE#) ..........................................38
Figure 16. BYTE# Timings for Read Operations............................ 38
Figure 17. BYTE# Timings for Write Operations............................ 38
Erase and Program Operations ..............................................39
Figure 18. Program Operation Timings.......................................... 40
Figure 19. Accelerated Program Timing Diagram.......................... 40
Figure 20. Chip/Sector Erase Operation Timings.......................... 41
Figure 21. Back-to-back Read/Write Cycle Timings...................... 42
Figure 22. Data# Polling Timings (During Embedded Algorithms). 42
Figure 23. Toggle Bit Timings (During Embedded Algorithms)...... 43
Figure 24. DQ2 vs. DQ6................................................................. 43
Temporary Sector Unprotect ..................................................44
Figure 25. Temporary Sector Unprotect Timing Diagram.............. 44
Figure 26. Sector/Sector Block Protect and
Unprotect Timing Diagram............................................................. 45
Alternate CE# Controlled Erase and Program Operations .....46
Figure 27. Alternate CE# Controlled Write (Erase/Program)
OperationTimings.......................................................................... 47
Erase And Programming Performance. . . . . . . . 48
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 48
TSOP & BGA Pin Capacitance. . . . . . . . . . . . . . . 48
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
FBE063—63-Ball Fine-Pitch Ball Grid Array (
f
BGA)
12x11mmpackage ..............................................................49
TS 048—48-Pin Standard TSOP ............................................50
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 51
TS 048—48-Pin Standard TSOP. . . . . . . . . . . . . . 52
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 53
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