參數(shù)資料
型號(hào): Am29DL800BB120ECB
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),3.0伏的CMOS只,同時(shí)作業(yè)快閃記憶體
文件頁(yè)數(shù): 35/43頁(yè)
文件大?。?/td> 580K
代理商: AM29DL800BB120ECB
Am29DL800B
35
P R E L I M I N A R Y
AC CHARACTERISTICS
Temporary Sector Unprotect
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
t
RRB
RESET# Hold Time from RY/BY# High for
Temporary Sector Unprotect
Min
4
μs
RESET#
t
VIDR
12 V
0 V or 3 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
0 V or 3 V
t
RRB
21519A-27
Figure 23.
Temporary Sector Unprotect Timing Diagram
相關(guān)PDF資料
PDF描述
AM29DL800BB120EE 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
Am29DL800BB120EEB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL800BB120EI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
Am29DL800BB120EIB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL800BB120FC 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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