參數(shù)資料
型號: AM29DL800BB120EK
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),3.0伏的CMOS只,同時作業(yè)快閃記憶體
文件頁數(shù): 38/46頁
文件大?。?/td> 725K
代理商: AM29DL800BB120EK
36
Am29DL800B
21519C4 December 4, 2006
D A T A S H E E T
AC CHARACTERISTICS
Temporary Sector Unprotect
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
t
RRB
RESET# Hold Time from RY/BY# High for
Temporary Sector Unprotect
Min
4
μs
RESET#
t
VIDR
12 V
0 V or 3 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
0 V or 3 V
t
RRB
Figure 23. Temporary Sector Unprotect Timing Diagram
Sector Protect: 150 μs
Sector Unprotect: 15 ms
1 μs
RESET#
SA, A6,
A1, A0
Data
CE#
WE#
OE#
60h
60h
40h
Valid*
Valid*
Valid*
Status
Sector Protect/Unprotect
Verify
V
ID
V
IH
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 24. Sector Protect/Unprotect Timing Diagram
相關(guān)PDF資料
PDF描述
AM29DL800BB120SD 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL800BB120SF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL800BB120SK 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL800BB120WBD 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL800BB120WBF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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