參數資料
型號: Am29DL800BB120SCB
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),3.0伏的CMOS只,同時作業(yè)快閃記憶體
文件頁數: 28/43頁
文件大?。?/td> 580K
代理商: AM29DL800BB120SCB
28
Am29DL800B
P R E L I M I N A R Y
AC CHARACTERISTICS
Read-Only Operations
Notes:
1. Not 100% tested.
2. See Figure 11 and Table 7 for test specifications.
Parameter
Description
Test Setup
Speed Options
JEDEC
Std.
70
90
120
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
70
80
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
70
80
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
70
80
120
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
30
35
50
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
25
30
30
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
25
30
30
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold
Time (Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
t
OH
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
ACC
t
RC
t
OEH
t
RH
t
OE
t
RH
0 V
RY/BY#
RESET#
t
DF
21519A-17
Figure 13.
Read Operation Timings
相關PDF資料
PDF描述
AM29DL800BB120SE 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
Am29DL800BB120SEB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL800BB120SI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
Am29DL800BB120SIB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL800BB120WBE 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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