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參數(shù)資料
| 型號(hào)： | AM29DL800BB120WBE |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 512K X 16 FLASH 3V PROM, 120 ns, PBGA48 |
| 封裝： | 6 X 9 MM, 0.80 MM PITCH, FBGA-48 |
| 文件頁數(shù)： | 23/43頁 |
| 文件大?。?/td> | 580K |
| 代理商： | AM29DL800BB120WBE |
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Am29DL800B
23
P R E L I M I N A R Y
Table 6.
Write Operation Status
Notes:
1.
DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm
is in progress. The device outputs array data if the system addresses a non-busy bank.
Status
DQ7
(Note 2)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
(Note 1)
0
0
DQ3
N/A
1
DQ2
(Note 2)
No toggle
Toggle
RY/BY#
0
0
Standard
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Suspend
Mode
Erase-Suspend-
Read
Erase
Suspended Sector
Non-Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
N/A
0
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| AM29DL800BB120WBI | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
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| Am29DL800BT120EEB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
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| AM29DL800BT-120WBC | 制造商:Advanced Micro Devices 功能描述: |
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