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參數(shù)資料
| 型號(hào)： | AM29DL800BT120SI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 1M X 8 FLASH 3V PROM, 120 ns, PDSO44 |
| 封裝： | MO-180AA, SOP-44 |
| 文件頁數(shù)： | 1/43頁 |
| 文件大小： | 580K |
| 代理商： | AM29DL800BT120SI |
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PRELIMINARY
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication#
21519
Issue Date:
April 1998
Rev:
A
Amendment/
+3
Am29DL800B
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Simultaneous Read/Write operations
— Host system can program or erase in one bank,
then immediately and simultaneously read from
the other bank
— Zero latency between read and write operations
— Read-while-erase
— Read-while-program
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
I
Manufactured on 0.35 μm process technology
— Compatible with 0.5 μm Am29DL800 device
I
High performance
— Access times as fast as 70 ns
I
Low current consumption (typical values
at 5 MHz)
— 7 mA active read current
— 21 mA active read-while-program or read-while-
erase current
— 17 mA active program-while-erase-suspended
current
— 200 nA in standby mode
— 200 nA in automatic sleep mode
— Standard t
CE
chip enable access time applies to
transition from automatic sleep mode to active
mode
I
Flexible sector architecture
— Two 16 Kword, two 8 Kword, four 4 Kword, and
fourteen 32 Kword sectors in word mode
— Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and
fourteen 64 Kbyte sectors in byte mode
— Any combination of sectors can be erased
— Supports full chip erase
I
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
I
Sector protection
— Hardware method of locking a sector to prevent
any program or erase operation within that
sector
— Sectors can be locked in-system or via
programming equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases sectors or entire chip
— Embedded Program algorithm automatically
programs and verifies data at specified address
I
Minimum 1,000,000 program/erase cycles
guaranteed per sector
I
Package options
— 44-pin SO
— 48-pin TSOP
— 48-ball FBGA
I
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
— Superior inadvertent write protection
I
Data# Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
I
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or
erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends or resumes erasing sectors to allow
reading and programming in other sectors
— No need to suspend if sector is in the other bank
I
Hardware reset pin (RESET#)
— Hardware method of resetting the device to
reading array data
相關(guān)PDF資料 |
PDF描述 |
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| Am29DL800BT120SIB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL800BT120WBE | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL800BT120WBI | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| Am29DL800BT90SEB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL800BT90SI | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
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