- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366407 > AM29DL800BT120WBE (ADVANCED MICRO DEVICES INC) 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | AM29DL800BT120WBE |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 512K X 16 FLASH 3V PROM, 120 ns, PBGA48 |
| 封裝： | 6 X 9 MM, 0.80 MM PITCH, FBGA-48 |
| 文件頁數(shù)： | 25/43頁 |
| 文件大小： | 580K |
| 代理商： | AM29DL800BT120WBE |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁當(dāng)前第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁
Am29DL800B
25
P R E L I M I N A R Y
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Erase or Embedded Program is in progress.
3. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode
current is 200 nA.
4. Not 100% tested.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9 Input Load Current
V
CC
= V
CC max
; A9 = 12.5 V
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Active Read Current
(Note 1)
CE# = V
IL,
OE#
=
V
IH
,
Byte Mode
5 MHz
7
12
mA
1 MHz
2
4
CE# = V
IL,
OE#
=
V
IH
,
Word Mode
5 MHz
7
12
1 MHz
2
4
I
CC2
V
CC
Active Write Current
(Note 2)
CE# = V
IL,
OE#
=
V
IH
, WE# = V
IL
15
30
mA
I
CC3
V
CC
Standby Current
(CE# Controlled)
V
CC
= V
CC max
; OE# = V
IL
;
CE#, RESET# = V
CC
±
0.3 V
0.2
5
μA
I
CC4
V
CC
Reset Current
(RESET# Controlled)
V
CC
= V
CC max
;
RESET# = V
SS
±
0.3 V
0.2
5
μA
I
CC5
Automatic Sleep Mode (Note 3)
V
IH
= V
CC
±
0.3 V;
V
IL
= V
SS
±
0.3 V
0.2
5
μA
I
CC6
V
CC
Active Read-While-
Program Current (Notes 1, 4)
CE# = V
IL,
OE#
=
V
IH
Byte
21
45
mA
Word
21
45
I
CC7
V
CC
Active Read-While-Erase
Current (Notes 1, 4)
CE# = V
IL,
OE#
=
V
IH
Byte
21
45
mA
Word
21
45
I
CC8
V
CC
Active Program-While-
Erase-Suspended Current
(Note 4)
CE# = V
IL,
OE#
=
V
IH
17
35
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7 x V
CC
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
V
CC
= 3.0 V
±
10%
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 4.0 mA, V
CC
= V
CC min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.0 mA, V
CC
= V
CC min
0.85 V
CC
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC min
V
CC
–0.4
V
V
LKO
Low V
CC
Lock-Out Voltage
(Note 4)
2.3
2.5
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29DL800BT120WBI | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| Am29DL800BT90SEB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL800BT90SI | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| Am29DL800BT90SIB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL800BT90WBE | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29DL800BT-90FC | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Advanced Micro Devices 功能描述: 制造商:AMD 功能描述: |
| AM29DS163DT100WAI | 制造商:Advanced Micro Devices 功能描述: |
| AM29DS323DT-110WMI | 制造商:Spansion 功能描述:NOR Flash Parallel 32Mbit 4M/2M x 8bit/16bit 110ns 48-Pin FBGA |
| AM29DS323DT11WMINS | 制造商:Advanced Micro Devices 功能描述: |
| AM29F002B-70JC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 8, 32 Pin, Plastic, PLCC |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。