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參數(shù)資料
| 型號： | AM29DL800BT70EF |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只，同時(shí)作業(yè)快閃記憶體 |
| 文件頁數(shù)： | 3/46頁 |
| 文件大?。?/td> | 725K |
| 代理商： | AM29DL800BT70EF |
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Publication#
21519
Issue Date:
December 4, 2006
Rev:
C
Amendment:
4
DATA SHEET
Am29DL800B
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
■
Simultaneous Read/Write operations
— Host system can program or erase in one bank,
then immediately and simultaneously read from
the other bank
— Zero latency between read and write operations
— Read-while-erase
— Read-while-program
■
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
■
Manufactured on 0.35 μm process technology
— Compatible with 0.5 μm Am29DL800 device
■
High performance
— Access times as fast as 70 ns
■
Low current consumption (typical values
at 5 MHz)
— 7 mA active read current
— 21 mA active read-while-program or read-while-
erase current
— 17 mA active program-while-erase-suspended current
— 200 nA in standby mode
— 200 nA in automatic sleep mode
— Standard t
CE
chip enable access time applies to
transition from automatic sleep mode to active mode
■
Flexible sector architecture
— Two 16 Kword, two 8 Kword, four 4 Kword, and
fourteen 32 Kword sectors in word mode
— Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and
fourteen 64 Kbyte sectors in byte mode
— Any combination of sectors can be erased
— Supports full chip erase
■
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
■
Sector protection
— Hardware method of locking a sector to prevent
any program or erase operation within that sector
— Sectors can be locked in-system or via
programming equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■
Top or bottom boot block configurations
available
■
Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases sectors or entire chip
— Embedded Program algorithm automatically
programs and verifies data at specified address
■
Minimum 1,000,000 program/erase cycles
guaranteed per sector
■
Package options
— 44-pin SO
— 48-pin TSOP
— 48-ball FBGA
■
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
— Superior inadvertent write protection
■
Data# Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
■
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or
erase cycle completion
■
Erase Suspend/Erase Resume
— Suspends or resumes erasing sectors to allow
reading and programming in other sectors
— No need to suspend if sector is in the other bank
■
Hardware reset pin (RESET#)
— Hardware method of resetting the device to
reading array data
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29DL800BT70EK | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL800BT70SD | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL800BT70SF | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL800BT70SK | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL800BT70WBD | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
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