參數(shù)資料
型號(hào): AM29DL800BT70WBD
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),3.0伏的CMOS只,同時(shí)作業(yè)快閃記憶體
文件頁數(shù): 21/46頁
文件大小: 725K
代理商: AM29DL800BT70WBD
December 4, 2006 21519C4
Am29DL800B
19
D A T A S H E E T
mediately
terminates the erase operation. If that
occurs, the sector erase command sequence should
be reinitiated once that bank has returned to reading
array data, to ensure data integrity.
Figure 4 illustrates the algorithm for the erase opera-
tion. Refer to the Erase and Program Operations tables
in the AC Characteristics section for parameters, and
Figure 18 section for timing diagrams.
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system
to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 50 μs time-out pe-
riod during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program
algorithm.
When the Erase Suspend command is written during
the sector erase operation, the device requires a max-
imum of 20 μs to suspend the erase operation.
However, when the Erase Suspend command is written
during the sector erase time-out, the device immedi-
ately terminates the time-out period and suspends the
erase operation.
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The sys-
tem can read data from or program data to any sector
not selected for erasure. (The device “erase suspends”
all sectors selected for erasure.) Reading at any ad-
dress within erase-suspended sectors produces status
information on DQ7–DQ0. The system can use DQ7,
or DQ6 and DQ2 together, to determine if a sector is
actively erasing or is erase-suspended. Refer to the
Write Operation Status section for information on these
status bits.
After an erase-suspended program operation is com-
plete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the pro-
gram operation using the DQ7 or DQ6 status bits, just
as in the standard Byte Program operation. Refer to the
Write Operation Status section for more information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode and Autoselect Command Sequence
sections for details.
To resume the sector erase operation, the system must
write the Erase Resume command. The bank address
of the erase-suspended bank is required when writing
this command. Further writes of the Resume command
are ignored. Another Erase Suspend command can be
written after the chip has resumed erasing.
Notes:
1. See Table 5 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Figure 4. Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
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AM29DL800BT70WBF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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