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| 型號(hào)： | AM29DL800BT90SK |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只，同時(shí)作業(yè)快閃記憶體 |
| 文件頁(yè)數(shù)： | 45/46頁(yè) |
| 文件大小： | 725K |
| 代理商： | AM29DL800BT90SK |
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December 4, 2006 21519C4
Am29DL800B
43
D A T A S H E E T
REVISION SUMMARY
Revision A (January 1998)
Initial release.
Revision A+1 (January 1998)
Reset Command
Deleted last paragraph in section, which applied to RESET#,
not the reset command.
Revision A+2 (Febrauary 1998)
Hardware Reset (RESET#)
Added note to table, fixed references to note.
Revision A+3 (April 1998)
Global
Removed references to the 80 ns speed option.
Changed the 70R ns (V
CC
± 5%) speed option to the
70 ns (V
CC
± 10%) speed option.
Figure 2, In-System Sector Protect/Unprotect
Algorithms
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another sec-
tor” back to setting up the next sector address.
DQ6: Toggle Bit I
In the first and second paragraphs, clarified that the
toggle bit may be read “at any address within the pro-
gramming or erasing bank,” not “at any address.” In the
fourth paragraph, clarified “device” to “bank.”
DC Characteristics
Added reference to Note 4 on I
CC6
and I
CC7
specifications.
AC Characteristics
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations:
Corrected the
notes reference for t
WHWH1
and t
WHWH2
. These param-
eters are 100% tested. Corrected the note reference for
t
VCS
. This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Figure 24, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million cycles.
Revision A+4 (August 1998)
Ordering Information
Corrected description for E and F package type desig-
nators to 48-pin TSOP.
AC Characteristics
Read Operations: Corrected t
RC
, t
ACC
, t
CE
for 90 ns
speed option.
Figure 24, Sector Protection/Unprotection Timing
Diagram
Changed timing parameters to match those in Figure 2.
Revision B (January 1999)
Connection Diagrams
Changed FBGA drawing to top view.
Ordering Information
Changed FBGA package reference to FBB048. Added
FBGA package markings to valid combinations table.
Revision B+1 (February 1999)
Physical Dimensions
Corrected ball grid layout on FBB048.
Revision B+2 (July 2, 1999)
Test Conditions
Test Specifications table:
Corrected to indicate that the
70 ns speed is tested at 30 pF loading.
Revision C (December 7, 1999)
AC Characteristics—Figure 17. Program
Operations Timing and Figure 18. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision C+1 (November 21, 2000)
Global
Added table of contents.
Ordering Information
Deleted burn-in option.
相關(guān)PDF資料 |
PDF描述 |
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| AM29DL800BT90WBD | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL800BT90WBF | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL800BT90WBK | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
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| AM29DL800BB120EK | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
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