參數(shù)資料
型號(hào): AM29DL800BT90WBE
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
封裝: 6 X 9 MM, 0.80 MM PITCH, FBGA-48
文件頁(yè)數(shù): 27/43頁(yè)
文件大?。?/td> 580K
代理商: AM29DL800BT90WBE
Am29DL800B
27
P R E L I M I N A R Y
TEST CONDITIONS
Table 7.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
21519A-15
Figure 11.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
All
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement reference
levels
1.5
V
Output timing measurement
reference levels
1.5
V
KS000010-PAL
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
21519A-16
Figure 12.
Input Waveforms and Measurement Levels
相關(guān)PDF資料
PDF描述
AM29DL800BT90WBI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL800BB120EC 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
Am29DL800BB120ECB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL800BB120EE 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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