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參數(shù)資料
| 型號： | AM29DL800BT90WBI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| 封裝： | 6 X 9 MM, 0.80 MM PITCH, FBGA-48 |
| 文件頁數(shù)： | 32/43頁 |
| 文件大?。?/td> | 580K |
| 代理商： | AM29DL800BT90WBI |
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Am29DL800B
P R E L I M I N A R Y
AC CHARACTERISTICS
OE#
WE#
CE#
V
CC
Data
Addresses
t
DS
t
AH
t
DH
t
WP
PD
t
WHWH1
t
WC
t
AS
t
WPH
t
VCS
555h
PA
PA
Read Status Data (last two cycles)
A0h
t
GHWL
t
CS
Status
D
OUT
Program Command Sequence (last two cycles)
RY/BY#
t
RB
t
BUSY
t
CH
PA
Notes:
1. PA = program address, PD = program data, D
OUT
is the true data at the program address.
2. Illustration shows device in word mode
21519A-21
Figure 17.
Program Operation Timings
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
GHWL
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
RY/BY#
t
RB
t
BUSY
Notes:
1.
SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
2. Illustration shows device in word mode.
21519A-22
Figure 18.
Chip/Sector Erase Operation Timings
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29DL800B | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL800BB120EC | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| Am29DL800BB120ECB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL800BB120EE | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| Am29DL800BB120EEB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
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