參數(shù)資料
型號(hào): AM29DS323DB110WMI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
中文描述: 2M X 16 FLASH 1.8V PROM, 110 ns, PBGA48
封裝: 6 X 12 MM, 0.80 MM PITCH, FBGA-48
文件頁數(shù): 40/54頁
文件大?。?/td> 1013K
代理商: AM29DS323DB110WMI
44
Am29DS323D
P R E L I M I NARY
AC CHARACTERISTICS
Data Polling and Toggle Bit
Notes:
1. Not 100% tested.
See Figure 11 and Table 16 for test specifications.
Parameter
Description
Test Setup
All Speed
Options
JEDEC
Std
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
200
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
200
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
200
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
50
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold
Data Polling
and Toggle Bit
Min
10
ns
WE#
CE#
OE#
High Z
tOE
High Z
DQ7
DQ0–DQ6
RY/BY#
tBUSY
Complement
True
Addresses
VA
tOEH
tCE
tCH
tOH
tDF
VA
Status Data
Complement
Status Data
True
Valid Data
tACC
tRC
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 21.
Data# Polling Timings (During Embedded Algorithms)
相關(guān)PDF資料
PDF描述
AM29DS323DB110WMIN 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS323DB120 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS323DB120EI 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS323DB120EIN 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS323DB120WMI 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
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