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參數(shù)資料
| 型號： | AM29DS323DB120 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 32兆位（4個M × 8位/ 2米x 16位），1.8伏的CMOS只，同時作業(yè)快閃記憶體 |
| 文件頁數(shù)： | 29/54頁 |
| 文件大?。?/td> | 1013K |
| 代理商： | AM29DS323DB120 |
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34
Am29DS323D
P R E L I M I NARY
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. The I
CC current listed is typically less than 1 mA/MHz, with OE# at VIH.
2. Maximum I
CC specifications are tested with VCC = VCCmax.
3. I
CC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC + 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN = VSS to VCC,
V
CC = VCC max
±1.0
A
I
LIT
A9 Input Load Current
V
CC = VCC max; A9 = 11 V
35
A
I
LO
Output Leakage Current
V
OUT = VSS to VCC,
V
CC = VCC max
±1.0
A
I
CC1
V
CC Active Read Current
(Notes 1, 2)
CE# = V
IL, OE# = VIH,
Byte Mode
5 MHz
5
16
mA
1 MHz
1
4
CE# = V
IL, OE# = VIH,
Word Mode
5 MHz
5
16
1 MHz
1
4
I
CC2
V
CC Active Write Current (Notes 2, 3)
CE# = V
IL, OE# = VIH, WE# = VIL
10
15
mA
I
CC3
V
CC Standby Current (Note 2)
CE#, RESET# = V
CC ± 0.3 V
0.2
5
A
I
CC4
V
CC Reset Current (Note 2)
RESET# = V
SS ± 0.3 V
0.2
5
A
I
CC5
Automatic Sleep Mode (Notes 2, 4)
V
IH = VCC ± 0.3 V;
V
IL = VSS ± 0.3 V
0.2
5
A
I
CC6
V
CC Active Read-While-Program
Current (Notes 1, 2)
CE# = V
IL, OE# = VIH
Byte
15
25
mA
Word
15
25
I
CC7
V
CC Active Read-While-Erase
Current (Notes 1, 2)
CE# = V
IL, OE# = VIH
Byte
15
25
mA
Word
15
25
I
CC8
V
CC Active
Program-While-Erase-Suspended
Current (Notes 2, 5)
CE# = V
IL, OE# = VIH
10
15
mA
I
ACC
ACC Accelerated Program Current,
Word or Byte
CE# = V
IL, OE# = VIH
ACC pin
5
10
mA
V
CC pin
10
15
mA
V
IL
Input Low Voltage
–0.5
V
CC x 0.2
V
IH
Input High Voltage
0.8 x V
CC
V
CC + 0.3
V
HH
Voltage for WP#/ACC Sector
Protect/Unprotect and Program
Acceleration
V
CC = 1.8–2.2 V
8.5
9.5
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC = 1.8–2.2 V
9
11
V
OL
Output Low Voltage
I
OL = 2.0 mA, VCC = VCC min
0.25
V
OH1
Output High Voltage
I
OH = –2.0 mA, VCC = VCC min
0.7 V
CC
V
OH2
I
OH = –100 A, VCC = VCC min
V
CC–0.1
V
LKO
Low V
CC Lock-Out Voltage (Note 5)
1.2
1.6
V
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PDF描述 |
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| AM29DS323DB120EI | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS323DB120EIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS323DB120WMI | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS323DB120WMIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS323DT110WMIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
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