參數(shù)資料
型號(hào): AM29DS323DB120WMIN
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4個(gè)M × 8位/ 2米x 16位),1.8伏的CMOS只,同時(shí)作業(yè)快閃記憶體
文件頁(yè)數(shù): 41/54頁(yè)
文件大?。?/td> 1013K
代理商: AM29DS323DB120WMIN
Am29DS323D
45
P R E L I M I NARY
AC CHARACTERISTICS
OE#
CE#
WE#
Addresses
tOEH
tDH
tAHT
tASO
tOEPH
tOE
Valid Data
(first read)
(second read)
(stops toggling)
tCEPH
tAHT
tAS
DQ6/DQ2
Valid Data
Valid
Status
Valid
Status
Valid
Status
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle
Figure 22.
Toggle Bit Timings (During Embedded Algorithms)
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 23.
DQ2 vs. DQ6
Enter
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Program
Resume
Embedded
Erasing
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