參數(shù)資料
型號(hào): AM29DS323DT120WMIN
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4個(gè)M × 8位/ 2米x 16位),1.8伏的CMOS只,同時(shí)作業(yè)快閃記憶體
文件頁數(shù): 32/54頁
文件大?。?/td> 1013K
代理商: AM29DS323DT120WMIN
Am29DS323D
37
P R E L I M I NARY
AC CHARACTERISTICS
Memory Array Read-Only Operations
Notes:
1. Not 100% tested.
2. See Figure 11 and Table 16 for test specifications.
3. For data polling and toggle bit specifications, see “Data Polling and Toggle Bit” on page 44.
Parameter
Description
Test Setup
110
120
JEDEC
Std
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
110
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
110
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
110
120
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
50
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold Time, Read Array (Note 1)
Min
0
ns
tOH
tCE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
tRC
tACC
tOEH
tRH
tOE
tRH
0 V
RY/BY#
RESET#
tDF
Figure 13.
Read Operation Timings
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