參數(shù)資料
型號(hào)： AM29F002BB-120JI
英文描述： -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9530NS with Lead Free Packaging
中文描述： x8閃存EEPROM的
文件頁(yè)數(shù)： 34/39頁(yè)
文件大?。?/td> 728K
代理商： AM29F002BB-120JI
34
Am29F002B/Am29F002NB
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1.
Typical program and erase times assume the following conditions: 25×C, 5.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 4.5 V (4.75 V for ±5% devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V, one pin at a time. RESET# not available on Am29F002NB.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1
8
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
7
s
Byte Programming Time
7
300
μs
Excludes system level
overhead (Note 5)
Chip Programming Time (Note 3)
1.8
5.4
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
相關(guān)PDF資料
PDF描述
AM29F002BB-120PC x8 Flash EEPROM
AM29F002BB-120PE x8 Flash EEPROM
AM29F002BB-120PI -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF9530NS with Tape and Reel Right Packaging
AM29F002BB-55EC x8 Flash EEPROM
AM29F002BB-55EI x8 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
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AM29F002BB-55JI 制造商:Spansion 功能描述:
AM29F002BB-90ED 制造商:Spansion 功能描述:Flash Memory IC
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