- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362252 > AM29F002BB-90EE -40V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package; Similar to IRF7704 with Lead-Free Packaging. PDF資料下載
參數(shù)資料
| 型號： | AM29F002BB-90EE |
| 英文描述： | -40V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package; Similar to IRF7704 with Lead-Free Packaging. |
| 中文描述： | x8閃存EEPROM的 |
| 文件頁數(shù)： | 34/39頁 |
| 文件大?。?/td> | 728K |
| 代理商： | AM29F002BB-90EE |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁當前第34頁第35頁第36頁第37頁第38頁第39頁
34
Am29F002B/Am29F002NB
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1.
Typical program and erase times assume the following conditions: 25×C, 5.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 4.5 V (4.75 V for ±5% devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V, one pin at a time. RESET# not available on Am29F002NB.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1
8
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
7
s
Byte Programming Time
7
300
μs
Excludes system level
overhead (Note 5)
Chip Programming Time (Note 3)
1.8
5.4
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F002BB-90EI | x8 Flash EEPROM |
| AM29F002BB-90JC | x8 Flash EEPROM |
| AM29F002BB-90JE | -150V Single P-Channel HEXFET Power MOSFET in a D2Pak package; A IRF6218S with Standard Packaging |
| AM29F002BB-90JI | -20V Single P-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7204 with Standard Packaging |
| AM29F002BB-90PC | -20V Single P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7204 with Lead Free Packaging |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F002BB-90EI | 制造商:Spansion 功能描述: |
| AM29F002BT-120JC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 8, 32 Pin, Plastic, PLCC 制造商:Analog Devices 功能描述:NOR Flash, 256K x 8, 32 Pin, Plastic, PLCC |
| AM29F002BT-55JF | 功能描述:閃存 2M (256KX8) 55ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F002BT70JI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F002BT-70JI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K x 8bit 70ns 32-Pin PLCC |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。