參數(shù)資料
型號(hào)： AM29F010-120DTC1
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1
中文描述： 128K X 8 FLASH 5V PROM, 120 ns, UUC30
文件頁(yè)數(shù)： 7/31頁(yè)
文件大?。?/td> 370K
代理商： AM29F010-120DTC1
Am29F010
7
DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself
does not occupy any addressable memory location.
The register is composed of latches that store the com-
mands, along with the address and data information
needed to execute the command. The contents of the
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. The appropriate device bus operations table
lists the inputs and control levels required, and the re-
sulting output. The following subsections describe
each of these operations in further detail.
Table 1.
Am29F010 Device Bus Operations
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, V
ID
= 12.0
±
0.5 V X = Don’t Care, A
IN
= Addresses In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1. Addresses are A16:A0.
2. The sector protect and sector unprotect functions must be implemented via programming equipment. See the “Sector Pro-
tection/Unprotection” section.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to V
IL
. CE# is the power
control and selects the device. OE# is the output control
and gates array data to the output pins. WE# should re-
main at V
IH
.
The internal state machine is set for reading array
data upon device power-up, or after a hardware re-
set. This ensures that no spurious alteration of the
memory content occurs during the power transition.
No command is necessary in this mode to obtain
array data. Standard microprocessor read cycles that
assert valid addresses on the device address inputs
produce valid data on the device data outputs. The
device remains enabled for read access until the
command register contents are altered.
See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifica-
tions and to the Read Operations Timings diagram for
the timing waveforms. I
CC1
in the DC Characteristics
table represents the active current specification for
reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which in-
cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to V
IL
, and OE# to V
IH
.
An erase operation can erase one sector, multiple sec-
tors, or the entire device. The Sector Address Tables
indicate the address space that each sector occupies.
A “sector address” consists of the address bits required
to uniquely select a sector. See the “Command Defini-
tions” section for details on erasing a sector or the en-
tire chip.
After the system writes the autoselect command se-
quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter-
nal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the “Autoselect Mode” and “Autoselect
Command Sequence” sections for more information.
I
CC2
in the DC Characteristics table represents the ac-
tive current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
Operation
CE#
OE#
WE#
Addresses
(Note 1)
DQ0–DQ7
Read
L
L
H
A
IN
D
OUT
Write
L
H
L
A
IN
D
IN
Standby
V
CC
± 0.5 V
X
X
X
High-Z
Output Disable
L
H
H
X
High-Z
Hardware Reset
X
X
X
X
High-Z
Temporary Sector Unprotect
X
X
X
A
IN
D
IN
相關(guān)PDF資料
PDF描述
AM29F010-120DWE1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1
AM29F010-120EC 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-120ECB 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-120EE 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-120EI 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F010-120JC 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC 制造商:Analog Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC
AM29F010-120JC/T 制造商:Advanced Micro Devices 功能描述:FLASH 128KX8,120NS,PLCC32,TAPE 制造商:Advanced Micro Devices 功能描述:128K X 8 FLASH 5V PROM, 120 ns, PQCC32
AM29F010120JI 制造商:Advanced Micro Devices 功能描述:
AM29F010120PC 制造商:Advanced Micro Devices 功能描述:
AM29F010-45JC 制造商:Advanced Micro Devices 功能描述:NOR Flash Parallel 5V 1Mbit 128K x 8bit 45ns 32-Pin PLCC
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