參數(shù)資料
型號: AM29F010-120DWE1
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1
中文描述: 128K X 8 FLASH 5V PROM, 120 ns, UUC30
文件頁數(shù): 9/31頁
文件大小: 370K
代理商: AM29F010-120DWE1
Am29F010
9
Table 3.
Am29F010 Autoselect Codes (High Voltage Method)
L = Logic Low = V
IL
, H = Logic High = V
IH
, SA = Sector Address, X = Don’t care.
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The
hardware sector unprotection feature re-enables
both program and erase operations in previously pro-
tected sectors.
Sector protection/unprotection must be implemented
using programming equipment. The procedure re-
quires a high voltage (V
ID
) on address pin A9 and the
control pins. Details on this method are provided in a
supplement, publication number 20495. Contact an
AMD representative to obtain a copy of the appropriate
document.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to the Command Defi-
nitions table). In addition, the following hardware data
protection measures prevent accidental erasure or pro-
gramming, which might otherwise be caused by spuri-
ous system level signals during V
CC
power-up and
power-down transitions, or from system noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not ac-
cept any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when V
CC
is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE#
= V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cy-
cle, CE# and WE# must be a logical zero while OE#
is a logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power
up, the device does not accept commands on the
rising edge of WE#. The internal state machine is
automatically reset to reading array data on
power-up.
Description
CE#
OE#
WE#
A16
to
A14
A13
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ7
to
DQ0
Manufacturer ID
:
AMD
L
L
H
X
X
V
ID
X
L
X
L
L
01h
Device ID: Am29F010
L
L
H
X
X
V
ID
X
L
X
L
H
20h
Sector Protection Verification
L
L
H
SA
X
V
ID
X
L
X
H
L
01h
(protected)
00h
(unprotected)
相關PDF資料
PDF描述
AM29F010-120EC 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-120ECB 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-120EE 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-120EI 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-120FC 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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