參數(shù)資料
型號(hào)： AM29F010-120JC
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述： 128K X 8 FLASH 5V PROM, 120 ns, PQCC32
封裝： PLASTIC, LCC-32
文件頁(yè)數(shù)： 12/31頁(yè)
文件大?。?/td> 370K
代理商： AM29F010-120JC
12
Am29F010
written. If the time between additional sector erase
commands can be assumed to be less than 50
μ
s, the
system need not monitor DQ3.
Any command during
the time-out period resets the device to reading
array data.
The system must rewrite the command se-
quence and any additional sector addresses and com-
mands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector
Erase Timer” section.) The time-out begins from the ris-
ing edge of the final WE# pulse in the command se-
quence.
Once the sector erase operation has begun, all other
commands are ignored.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the sta-
tus of the erase operation by using DQ7 or DQ6. Refer
to “Write Operation Status” for information on these
status bits.
Figure 2 illustrates the algorithm for the erase opera-
tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
the Sector Erase Operations Timing diagram for timing
waveforms.
Notes:
1. See the appropriate Command Definitions table for erase
command sequence.
2.
See “DQ3: Sector Erase Timer” for more information.
Figure 2.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
16736G-8
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