參數(shù)資料
型號: Am29F010-45EIB
廠商: Advanced Micro Devices, Inc.
英文描述: 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 1兆位(128畝× 8位)的CMOS 5.0伏只,統(tǒng)一部門快閃記憶體
文件頁數(shù): 4/8頁
文件大?。?/td> 56K
代理商: AM29F010-45EIB
4
Am29F010 Known Good Die
1/13/98
S U P P L E M E N T
PAD DESCRIPTION
Note:
The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
Pad
Signal
Pad Center (mils)
Pad Center (millimeters)
X
Y
X
Y
1
V
CC
0.00
0.00
0.00
0.00
2
A16
–33.20
–1.30
–0.84
–0.03
3
A15
–41.60
–1.30
–1.06
–0.03
4
A12
–49.90
–1.30
–1.27
–0.03
5
A7
–58.30
–1.30
–1.48
–0.03
6
A6
–66.60
–1.30
–1.69
–0.03
7
A5
–75.00
–1.30
–1.91
–0.03
8
A4
–74.40
–10.50
–1.89
–0.27
9
A3
–75.60
–158.20
–1.92
–4.02
10
A2
–69.40
–166.80
–1.76
–4.24
11
A1
–56.10
–166.80
–1.42
–4.24
12
A0
–46.10
–166.80
–1.17
–4.24
13
D0
–36.30
–166.90
–0.92
–4.24
14
D1
–25.90
–166.90
–0.66
–4.24
15
D2
–13.30
–166.90
–0.34
–4.24
16
V
SS
–4.30
–166.90
–0.11
–4.24
17
D3
4.70
–166.90
0.12
–4.24
18
D4
17.30
–166.90
0.44
–4.24
19
D5
27.60
–166.90
0.70
–4.24
20
D6
40.20
–166.90
1.02
–4.24
21
D7
50.60
–166.90
1.29
–4.24
22
CE#
60.60
–166.80
1.54
–4.24
23
A10
74.00
–166.80
1.88
–4.24
24
OE#
81.40
–158.20
2.07
–4.02
25
A11
80.20
–10.40
2.04
–0.26
26
A9
80.80
–1.30
2.05
–0.03
27
A8
72.40
–1.30
1.84
–0.03
28
A13
64.10
–1.30
1.63
–0.03
29
A14
55.70
–1.30
1.41
–0.03
30
WE#
47.40
–1.30
1.20
–0.03
相關PDF資料
PDF描述
AM29F010-55EIB 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Am29F010-45FCB 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-55FCB 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Am29F010-45FEB 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Am29F010-55FEB 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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