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參數(shù)資料
| 型號(hào)： | AM29F010A-120 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | LM120/LM320 Series 3-Terminal Negative Regulators; Package: TO-3; No of Pins: 2; Qty per Container: 50; Container: Tray |
| 中文描述： | 1兆位（128畝× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體 |
| 文件頁數(shù)： | 14/31頁 |
| 文件大?。?/td> | 389K |
| 代理商： | AM29F010A-120 |
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14
Am29F010A
WRITE OPERATION STATUS
The device provides several bits to determine the sta-
tus of a write operation: DQ3, DQ5, DQ6, and DQ7.
Table 5 and the following subsections describe the
functions of these bits. DQ7 and DQ6 each offer a
method for determining whether a program or erase
operation is complete or in progress. These three bits
are discussed first.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host sys-
tem whether an Embedded Algorithm is in progress or
completed. Data# Polling is valid after the rising edge
of the final WE# pulse in the program or erase com-
mand sequence.
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum pro-
grammed to DQ7. When the Embedded Program
algorithm is complete, the device outputs the datum
programmed to DQ7. The system must provide the pro-
gram address to read valid status information on DQ7.
If a program address falls within a protected sector,
Data# Polling on DQ7 is active for approximately 2
μs,
then the device returns to reading array data.
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase al-
gorithm is complete, Data# Polling produces a “1” on
DQ7. This is analogous to the complement/true datum
output described for the Embedded Program algorithm:
the erase function changes all the bits in a sector to “1”;
prior to this, the device outputs the “complement,” or
“0.” The system must provide an address within any of
the sectors selected for erasure to read valid status in-
formation on DQ7.
After an erase command sequence is written, if all sec-
tors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100 μs, then the de-
vice returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the se-
lected sectors that are protected.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at DQ7–
DQ0 on the
following
read cycles. This is because DQ7
may change asynchronously with DQ0–DQ6 while
Output Enable (OE#) is asserted low. The Data# Poll-
ing Timings (During Embedded Algorithms) figure in
the “AC Characteristics” section illustrates this.
Table 5 shows the outputs for Data# Polling on DQ7.
Figure 3 shows the Data# Polling algorithm.
DQ7 = Data
Yes
No
No
DQ5 = 1
No
Yes
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data
START
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2.
DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
22181B-8
Figure 3.
Data# Polling Algorithm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F010A-45 | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F010A-70 | LM120/LM320 Series 3-Terminal Negative Regulators; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail |
| AM29F010A-90 | LM120/LM320 Series 3-Terminal Negative Regulators; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail |
| AM29F010 | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F010-1 | 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F010B-120EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, TSSOP |
| AM29F010B-120JC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC |
| AM29F010B-120JD | 制造商:Spansion 功能描述:IC SM FLASH 5V 1MB |
| AM29F010B-120JD | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29F010B-120JF | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:IC SM FLASH 5V 1MB |
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