參數(shù)資料
型號(hào): AM29F016-90
廠商: Advanced Micro Devices, Inc.
英文描述: 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述: 16兆位(2097152 × 8位)的CMOS 5.0伏只,扇區(qū)擦除閃存
文件頁(yè)數(shù): 5/36頁(yè)
文件大?。?/td> 219K
代理商: AM29F016-90
Am29F016
5
CONNECTION DIAGRAMS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
NC
NC
A20
NC
WE
OE
RY/
BY
DQ7
DQ6
DQ5
DQ4
V
CC
V
SS
V
SS
DQ3
DQ2
DQ1
DQ0
A0
A1
A2
A3
NC
NC
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
NC
NC
A19
A18
A17
A16
A15
A14
A13
A12
CE
V
CC
NC
A10
A9
A8
A7
A6
A5
A4
NC
RESET
A11
NC
18805D-3
Standard TSOP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
NC
NC
A20
NC
WE
OE
DQ2
DQ1
DQ0
A0
A1
A2
A3
NC
NC
RY/
BY
DQ7
DQ6
DQ5
DQ4
V
CC
V
SS
V
SS
DQ3
NC
NC
A19
A18
A17
A16
A15
A14
A13
A12
CE
V
CC
NC
RESET
A11
A10
A9
A8
A7
A6
A5
A4
NC
NC
18805D-4
Reverse TSOP
相關(guān)PDF資料
PDF描述
AM29F016B-120DGC1 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DPC1 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DGI1 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DPI1 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DTI1 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F016-90EC 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 48-Pin TSOP
AM29F016B-120DGC1 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 120NS DIE - Gel-pak, waffle pack, wafer, diced wafer on film
AM29F016B-120DPC1 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die
AM29F016B120EC 制造商:Advanced Micro Devices 功能描述:
AM29F016B-120EC 制造商:Advanced Micro Devices 功能描述: